Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

A. Gin*, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi, M. Tidrow

*Corresponding author for this work

Research output: Contribution to journalArticle

96 Scopus citations

Abstract

The surface passivation of Type-II InAs/GaSb superlattice photodectors, achieved by using various ammonium sulfide solutions, was studied. It was found that the zero-bias resistance of treated photodetectors was improved by over an order of magnitude and reverse-bias dark current density was reduced by approximately two orders of magnitude. The overall dark current was modeled by taking into account the trap-assisted tunnelling leakage. The model showed more than an 70 times reduction in trap density for passivated detectors.

Original languageEnglish (US)
Pages (from-to)2037-2039
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number12
DOIs
StatePublished - Mar 22 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Gin, A., Wei, Y., Hood, A., Bajowala, A., Yazdanpanah, V., Razeghi, M., & Tidrow, M. (2004). Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes. Applied Physics Letters, 84(12), 2037-2039. https://doi.org/10.1063/1.1686894