Abstract
The surface passivation of Type-II InAs/GaSb superlattice photodectors, achieved by using various ammonium sulfide solutions, was studied. It was found that the zero-bias resistance of treated photodetectors was improved by over an order of magnitude and reverse-bias dark current density was reduced by approximately two orders of magnitude. The overall dark current was modeled by taking into account the trap-assisted tunnelling leakage. The model showed more than an 70 times reduction in trap density for passivated detectors.
Original language | English (US) |
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Pages (from-to) | 2037-2039 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 12 |
DOIs | |
State | Published - Mar 22 2004 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)