Amorphous ferromagnetic layers for magnetic tunnel junctions

B. Warot*, J. Imrie, A. K. Petford-Long, M. Sharma, T. C. Anthony

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Magnetic tunnel junctions are being actively studied for use as single cells in magnetic random access memory (MRAM). For MRAM application purposes, a narrow distribution of the switching fields of the cells is required. Amorphous ferromagnetic layers used as sense layers in the junctions are predicted to improve the uniformity properties. In this article, we report the results of transmission electron microscopy studies of the crystalline structure of CoFeB and CoFeHfNb ferromagnetic layers, known to be amorphous. The results show the influence of the underlayer and emphasise the importance of deposition order on the crystallographic structure of the layers.

Original languageEnglish (US)
Pages (from-to)49-52
Number of pages4
JournalInstitute of Physics Conference Series
Volume179
StatePublished - Oct 19 2004
EventElectron Microscopy and Analysis 2003 - Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference - Oxford, United Kingdom
Duration: Sep 3 2003Sep 5 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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