Abstract
Magnetic tunnel junctions are being actively studied for use as single cells in magnetic random access memory (MRAM). For MRAM application purposes, a narrow distribution of the switching fields of the cells is required. Amorphous ferromagnetic layers used as sense layers in the junctions are predicted to improve the uniformity properties. In this article, we report the results of transmission electron microscopy studies of the crystalline structure of CoFeB and CoFeHfNb ferromagnetic layers, known to be amorphous. The results show the influence of the underlayer and emphasise the importance of deposition order on the crystallographic structure of the layers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 49-52 |
| Number of pages | 4 |
| Journal | Institute of Physics Conference Series |
| Volume | 179 |
| State | Published - 2004 |
| Event | Electron Microscopy and Analysis 2003 - Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference - Oxford, United Kingdom Duration: Sep 3 2003 → Sep 5 2003 |
ASJC Scopus subject areas
- General Physics and Astronomy