Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections

D. M.H. Kwakernaak*, W. K. Chan, B. Kharas, N. Maley, H. Mohseni, L. Yang, D. Capewell, V. Frantz, T. Mood, G. A. Pajer, D. A. Ackerman, J. H. Abeles, A. M. Braun, J. G. Kim, D. S. Bang, D. H. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Low loss, single mode rib waveguides, based on PECVD deposited multi-layer amorphous silicon are fabricated. These waveguide are refractive index and mode-matched to III/V laser waveguides. Methods for monolithic integration of these passive amorphous silicon waveguides with InGaAsP/InP gain sections are demonstrated. Results of a multi-wavelength laser based on an amorphous silicon arrayed waveguide grating integrated on a single chip with InGaAsP gain sections are presented.

Original languageEnglish (US)
Title of host publicationOptoelectronic Materials and Devices
StatePublished - 2006
EventOptoelectronic Materials and Devices - Gwangju, Korea, Republic of
Duration: Sep 5 2006Sep 7 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6352 I
ISSN (Print)0277-786X


OtherOptoelectronic Materials and Devices
Country/TerritoryKorea, Republic of


  • Amorphous silicon
  • Photonic integrated circuits
  • Waveguides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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