Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections

D. M.H. Kwakernaak; W. K. Chan; B. Kharas; N. Maley; H. Mohseni; L. Yang; D. Capewell; V. Frantz; T. Mood; G. A. Pajer; D. A. Ackerman; J. H. Abeles; A. M. Braun; J. G. Kim; D. S. Bang; D. H. Lee

doi:10.1117/12.691710

Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections

D. M.H. Kwakernaak^*, W. K. Chan, B. Kharas, N. Maley, H. Mohseni, L. Yang, D. Capewell, V. Frantz, T. Mood, G. A. Pajer, D. A. Ackerman, J. H. Abeles, A. M. Braun, J. G. Kim, D. S. Bang, D. H. Lee

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Low loss, single mode rib waveguides, based on PECVD deposited multi-layer amorphous silicon are fabricated. These waveguide are refractive index and mode-matched to III/V laser waveguides. Methods for monolithic integration of these passive amorphous silicon waveguides with InGaAsP/InP gain sections are demonstrated. Results of a multi-wavelength laser based on an amorphous silicon arrayed waveguide grating integrated on a single chip with InGaAsP gain sections are presented.

Original language	English (US)
Title of host publication	Optoelectronic Materials and Devices
DOIs	https://doi.org/10.1117/12.691710
State	Published - 2006
Event	Optoelectronic Materials and Devices - Gwangju, Korea, Republic of Duration: Sep 5 2006 → Sep 7 2006

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6352 I
ISSN (Print)	0277-786X

Other

Other	Optoelectronic Materials and Devices
Country/Territory	Korea, Republic of
City	Gwangju
Period	9/5/06 → 9/7/06

Keywords

Amorphous silicon
Photonic integrated circuits
Waveguides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.691710

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Kwakernaak, D. M. H., Chan, W. K., Kharas, B., Maley, N., Mohseni, H., Yang, L., Capewell, D., Frantz, V., Mood, T., Pajer, G. A., Ackerman, D. A., Abeles, J. H., Braun, A. M., Kim, J. G., Bang, D. S., & Lee, D. H. (2006). Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections. In Optoelectronic Materials and Devices [635217] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6352 I). https://doi.org/10.1117/12.691710

Kwakernaak, D. M.H. ; Chan, W. K. ; Kharas, B. ; Maley, N. ; Mohseni, H. ; Yang, L. ; Capewell, D. ; Frantz, V. ; Mood, T. ; Pajer, G. A. ; Ackerman, D. A. ; Abeles, J. H. ; Braun, A. M. ; Kim, J. G. ; Bang, D. S. ; Lee, D. H. / Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections. Optoelectronic Materials and Devices. 2006. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{c3ffadd717d6431b8a949addcf67d6c6,

title = "Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections",

abstract = "Low loss, single mode rib waveguides, based on PECVD deposited multi-layer amorphous silicon are fabricated. These waveguide are refractive index and mode-matched to III/V laser waveguides. Methods for monolithic integration of these passive amorphous silicon waveguides with InGaAsP/InP gain sections are demonstrated. Results of a multi-wavelength laser based on an amorphous silicon arrayed waveguide grating integrated on a single chip with InGaAsP gain sections are presented.",

keywords = "Amorphous silicon, Photonic integrated circuits, Waveguides",

author = "Kwakernaak, {D. M.H.} and Chan, {W. K.} and B. Kharas and N. Maley and H. Mohseni and L. Yang and D. Capewell and V. Frantz and T. Mood and Pajer, {G. A.} and Ackerman, {D. A.} and Abeles, {J. H.} and Braun, {A. M.} and Kim, {J. G.} and Bang, {D. S.} and Lee, {D. H.}",

year = "2006",

doi = "10.1117/12.691710",

language = "English (US)",

isbn = "0819464473",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Optoelectronic Materials and Devices",

note = "Optoelectronic Materials and Devices ; Conference date: 05-09-2006 Through 07-09-2006",

}

Kwakernaak, DMH, Chan, WK, Kharas, B, Maley, N, Mohseni, H, Yang, L, Capewell, D, Frantz, V, Mood, T, Pajer, GA, Ackerman, DA, Abeles, JH, Braun, AM, Kim, JG, Bang, DS & Lee, DH 2006, Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections. in Optoelectronic Materials and Devices., 635217, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6352 I, Optoelectronic Materials and Devices, Gwangju, Korea, Republic of, 9/5/06. https://doi.org/10.1117/12.691710

Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections. / Kwakernaak, D. M.H.; Chan, W. K.; Kharas, B.; Maley, N.; Mohseni, H.; Yang, L.; Capewell, D.; Frantz, V.; Mood, T.; Pajer, G. A.; Ackerman, D. A.; Abeles, J. H.; Braun, A. M.; Kim, J. G.; Bang, D. S.; Lee, D. H.

Optoelectronic Materials and Devices. 2006. 635217 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6352 I).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections

AU - Kwakernaak, D. M.H.

AU - Chan, W. K.

AU - Kharas, B.

AU - Maley, N.

AU - Mohseni, H.

AU - Yang, L.

AU - Capewell, D.

AU - Frantz, V.

AU - Mood, T.

AU - Pajer, G. A.

AU - Ackerman, D. A.

AU - Abeles, J. H.

AU - Braun, A. M.

AU - Kim, J. G.

AU - Bang, D. S.

AU - Lee, D. H.

PY - 2006

Y1 - 2006

N2 - Low loss, single mode rib waveguides, based on PECVD deposited multi-layer amorphous silicon are fabricated. These waveguide are refractive index and mode-matched to III/V laser waveguides. Methods for monolithic integration of these passive amorphous silicon waveguides with InGaAsP/InP gain sections are demonstrated. Results of a multi-wavelength laser based on an amorphous silicon arrayed waveguide grating integrated on a single chip with InGaAsP gain sections are presented.

AB - Low loss, single mode rib waveguides, based on PECVD deposited multi-layer amorphous silicon are fabricated. These waveguide are refractive index and mode-matched to III/V laser waveguides. Methods for monolithic integration of these passive amorphous silicon waveguides with InGaAsP/InP gain sections are demonstrated. Results of a multi-wavelength laser based on an amorphous silicon arrayed waveguide grating integrated on a single chip with InGaAsP gain sections are presented.

KW - Amorphous silicon

KW - Photonic integrated circuits

KW - Waveguides

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DO - 10.1117/12.691710

M3 - Conference contribution

AN - SCOPUS:33845636504

SN - 0819464473

SN - 9780819464477

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Optoelectronic Materials and Devices

T2 - Optoelectronic Materials and Devices

Y2 - 5 September 2006 through 7 September 2006

ER -

Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections

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