TY - JOUR
T1 - Amorphous TiO2 Compact Layers via ALD for Planar Halide Perovskite Photovoltaics
AU - Kim, In Soo
AU - Haasch, Richard T.
AU - Cao, Duyen H.
AU - Farha, Omar K.
AU - Hupp, Joseph T.
AU - Kanatzidis, Mercouri G.
AU - Martinson, Alex B.F.
N1 - Funding Information:
This work was supported as part of the Argonne Northwestern Solar Energy Research Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award DE-SC0001059. X-ray photoelectron spectroscopy measurements were carried out in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois. We thank Dr. J. D.Emery for grazing incidence XRD measurements.
Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/9/21
Y1 - 2016/9/21
N2 - A low-temperature (<120 °C) route to pinhole-free amorphous TiO2 compact layers may pave the way to more efficient, flexible, and stable inverted perovskite halide device designs. Toward this end, we utilize low-temperature thermal atomic layer deposition (ALD) to synthesize ultrathin (12 nm) compact TiO2 underlayers for planar halide perovskite PV. Although device performance with as-deposited TiO2 films is poor, we identify room-temperature UV-O3 treatment as a route to device efficiency comparable to crystalline TiO2 thin films synthesized by higher temperature methods. We further explore the chemical, physical, and interfacial properties that might explain the improved performance through X-ray diffraction, spectroscopic ellipsometry, Raman spectroscopy, and X-ray photoelectron spectroscopy. These findings challenge our intuition about effective electron selective layers as well as point the way to a greater selection of flexible substrates and more stable inverted device designs.
AB - A low-temperature (<120 °C) route to pinhole-free amorphous TiO2 compact layers may pave the way to more efficient, flexible, and stable inverted perovskite halide device designs. Toward this end, we utilize low-temperature thermal atomic layer deposition (ALD) to synthesize ultrathin (12 nm) compact TiO2 underlayers for planar halide perovskite PV. Although device performance with as-deposited TiO2 films is poor, we identify room-temperature UV-O3 treatment as a route to device efficiency comparable to crystalline TiO2 thin films synthesized by higher temperature methods. We further explore the chemical, physical, and interfacial properties that might explain the improved performance through X-ray diffraction, spectroscopic ellipsometry, Raman spectroscopy, and X-ray photoelectron spectroscopy. These findings challenge our intuition about effective electron selective layers as well as point the way to a greater selection of flexible substrates and more stable inverted device designs.
KW - amorphous titanium dioxide
KW - atomic layer deposition
KW - hybrid perovskites
KW - low temperature processing
KW - solar energy conversion
UR - http://www.scopus.com/inward/record.url?scp=84988602832&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84988602832&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b07658
DO - 10.1021/acsami.6b07658
M3 - Article
C2 - 27598453
AN - SCOPUS:84988602832
SN - 1944-8244
VL - 8
SP - 24310
EP - 24314
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 37
ER -