An accurate method to check chemical interfaces of epitaxial III-V compounds

R. Bisaro*, G. Laurencin, A. Friederich, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

54 Scopus citations

Abstract

We have developed a method of chemical beveling coupled with line scan Auger measurements to check abrupt interfaces of epitaxial III-V compounds. Interface widths between 53 and 89 Å have been measured by this method for an InP/Ga0.47In0.53As/InP double heterostructure grown by low pressure metalorganic chemical vapor deposition. The ultimate width checkable by this method lies between 10 and 15 Å and is of the order of magnitude of the escape depth of the Auger electrons selected.

Original languageEnglish (US)
Pages (from-to)978-980
Number of pages3
JournalApplied Physics Letters
Volume40
Issue number11
DOIs
StatePublished - 1982

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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