An accurate method to check chemical interfaces of epitaxial III-V compounds

R. Bisaro; G. Laurencin; A. Friederich; M. Razeghi

doi:10.1063/1.92974

An accurate method to check chemical interfaces of epitaxial III-V compounds

R. Bisaro^*, G. Laurencin, A. Friederich, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

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54 Scopus citations

Abstract

We have developed a method of chemical beveling coupled with line scan Auger measurements to check abrupt interfaces of epitaxial III-V compounds. Interface widths between 53 and 89 Å have been measured by this method for an InP/Ga_0.47In_0.53As/InP double heterostructure grown by low pressure metalorganic chemical vapor deposition. The ultimate width checkable by this method lies between 10 and 15 Å and is of the order of magnitude of the escape depth of the Auger electrons selected.

Original language	English (US)
Pages (from-to)	978-980
Number of pages	3
Journal	Applied Physics Letters
Volume	40
Issue number	11
DOIs	https://doi.org/10.1063/1.92974
State	Published - 1982

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "An accurate method to check chemical interfaces of epitaxial III-V compounds",

abstract = "We have developed a method of chemical beveling coupled with line scan Auger measurements to check abrupt interfaces of epitaxial III-V compounds. Interface widths between 53 and 89 {\AA} have been measured by this method for an InP/Ga0.47In0.53As/InP double heterostructure grown by low pressure metalorganic chemical vapor deposition. The ultimate width checkable by this method lies between 10 and 15 {\AA} and is of the order of magnitude of the escape depth of the Auger electrons selected.",

author = "R. Bisaro and G. Laurencin and A. Friederich and M. Razeghi",

year = "1982",

doi = "10.1063/1.92974",

language = "English (US)",

volume = "40",

pages = "978--980",

journal = "Applied Physics Letters",

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T1 - An accurate method to check chemical interfaces of epitaxial III-V compounds

AU - Bisaro, R.

AU - Laurencin, G.

AU - Friederich, A.

AU - Razeghi, M.

PY - 1982

Y1 - 1982

N2 - We have developed a method of chemical beveling coupled with line scan Auger measurements to check abrupt interfaces of epitaxial III-V compounds. Interface widths between 53 and 89 Å have been measured by this method for an InP/Ga0.47In0.53As/InP double heterostructure grown by low pressure metalorganic chemical vapor deposition. The ultimate width checkable by this method lies between 10 and 15 Å and is of the order of magnitude of the escape depth of the Auger electrons selected.

AB - We have developed a method of chemical beveling coupled with line scan Auger measurements to check abrupt interfaces of epitaxial III-V compounds. Interface widths between 53 and 89 Å have been measured by this method for an InP/Ga0.47In0.53As/InP double heterostructure grown by low pressure metalorganic chemical vapor deposition. The ultimate width checkable by this method lies between 10 and 15 Å and is of the order of magnitude of the escape depth of the Auger electrons selected.

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DO - 10.1063/1.92974

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -

An accurate method to check chemical interfaces of epitaxial III-V compounds

Abstract

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