Abstract
We have developed a method of chemical beveling coupled with line scan Auger measurements to check abrupt interfaces of epitaxial III-V compounds. Interface widths between 53 and 89 Å have been measured by this method for an InP/Ga0.47In0.53As/InP double heterostructure grown by low pressure metalorganic chemical vapor deposition. The ultimate width checkable by this method lies between 10 and 15 Å and is of the order of magnitude of the escape depth of the Auger electrons selected.
Original language | English (US) |
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Pages (from-to) | 978-980 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 40 |
Issue number | 11 |
DOIs | |
State | Published - 1982 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)