An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

Shun Chang Liu; Chen Min Dai; Yimeng Min; Yi Hou; Andrew H. Proppe; Ying Zhou; Chao Chen; Shiyou Chen; Jiang Tang; Ding Jiang Xue; Edward H. Sargent; Jin Song Hu

doi:10.1038/s41467-021-20955-5

An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

Shun Chang Liu, Chen Min Dai, Yimeng Min, Yi Hou, Andrew H. Proppe, Ying Zhou, Chao Chen, Shiyou Chen, Jiang Tang, Ding Jiang Xue^*, Edward H. Sargent, Jin Song Hu

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

In lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~10¹² cm⁻³. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m⁻²; and 60 thermal cycles from −40 to 85 °C.

Original language	English (US)
Article number	670
Journal	Nature communications
Volume	12
Issue number	1
DOIs	https://doi.org/10.1038/s41467-021-20955-5
State	Published - Dec 1 2021

Funding

This work is supported by the National Natural Science Foundation of China (21922512, 21875264, 61725401), the Youth Innovation Promotion Association CAS (2017050). The work of Y.M., Y.H., A.P., and E.H.S. is supported by the US Department of the Navy, Office of Naval Research (Grant Award NO. N00014-17-1-2524).

ASJC Scopus subject areas

General Chemistry
General Biochemistry, Genetics and Molecular Biology
General Physics and Astronomy

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abstract = "In lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~1012 cm−3. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m−2; and 60 thermal cycles from −40 to 85 °C.",

author = "Liu, {Shun Chang} and Dai, {Chen Min} and Yimeng Min and Yi Hou and Proppe, {Andrew H.} and Ying Zhou and Chao Chen and Shiyou Chen and Jiang Tang and Xue, {Ding Jiang} and Sargent, {Edward H.} and Hu, {Jin Song}",

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AU - Proppe, Andrew H.

AU - Zhou, Ying

AU - Chen, Chao

AU - Chen, Shiyou

AU - Tang, Jiang

AU - Xue, Ding Jiang

AU - Sargent, Edward H.

AU - Hu, Jin Song

PY - 2021/12/1

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N2 - In lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~1012 cm−3. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m−2; and 60 thermal cycles from −40 to 85 °C.

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An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

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