An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

Shun Chang Liu, Chen Min Dai, Yimeng Min, Yi Hou, Andrew H. Proppe, Ying Zhou, Chao Chen, Shiyou Chen, Jiang Tang, Ding Jiang Xue*, Edward H. Sargent, Jin Song Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

70 Scopus citations

Fingerprint

Dive into the research topics of 'An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics'. Together they form a unique fingerprint.

Engineering

INIS

Chemistry

Material Science