An investigation of excess noise in transition-edge sensors on a solid silicon substrate

S. G. Crowder; M. A. Lindeman; M. B. Anderson; S. R. Bandler; N. Bilgri; M. P. Bruijn; J. Chervenak; E. Figueroa-Feliciano; F. Finkbeiner; A. Germeau; H. F C Hoevers; N. Iyomoto; R. Kelly; C. A. Kilbourne; T. Lai; J. Man; D. McCammon; K. L. Nelms; F. S. Porter; L. Rocks; T. Saab; J. Sadleir; G. Vidugiris

doi:10.1016/j.nima.2005.12.117

An investigation of excess noise in transition-edge sensors on a solid silicon substrate

S. G. Crowder^*, M. A. Lindeman, M. B. Anderson, S. R. Bandler, N. Bilgri, M. P. Bruijn, J. Chervenak, E. Figueroa-Feliciano, F. Finkbeiner, A. Germeau, H. F C Hoevers, N. Iyomoto, R. Kelly, C. A. Kilbourne, T. Lai, J. Man, D. McCammon, K. L. Nelms, F. S. Porter, L. RocksT. Saab, J. Sadleir, G. Vidugiris

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Transition-edge sensors (TESs) exhibit two major types of excess noise above the expected and unavoidable thermodynamic fluctuation noise (TFN) to the heat sink and Johnson noise. High-resistance TESs such as those made by the Netherlands Institute for Space Research (SRON) show excess noise consistent with internal TFN (ITFN) caused by random energy transport within the TES itself while low resistance TESs show an excess voltage noise of unknown origin seemingly unrelated to temperature fluctuations. Running a high-resistance TES on a high thermal conductivity substrate should suppress ITFN and allow detection of any excess voltage noise. We tested two TESs on a solid silicon substrate fabricated by SRON of a relatively high normal state resistance of ∼200 mΩ. After determining a linear model of the TES response to noise for the devices, we found little excess TFN and little excess voltage noise for bias currents of up to ∼20 μA.

Original language	English (US)
Pages (from-to)	721-723
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	559
Issue number	2
DOIs	https://doi.org/10.1016/j.nima.2005.12.117
State	Published - Apr 14 2006

Keywords

Calorimeter
Excess noise
Transition edge sensor
Unsuspended device

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2005.12.117

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Crowder, S. G., Lindeman, M. A., Anderson, M. B., Bandler, S. R., Bilgri, N., Bruijn, M. P., Chervenak, J., Figueroa-Feliciano, E., Finkbeiner, F., Germeau, A., Hoevers, H. F. C., Iyomoto, N., Kelly, R., Kilbourne, C. A., Lai, T., Man, J., McCammon, D., Nelms, K. L., Porter, F. S., ... Vidugiris, G. (2006). An investigation of excess noise in transition-edge sensors on a solid silicon substrate. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 559(2), 721-723. https://doi.org/10.1016/j.nima.2005.12.117

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title = "An investigation of excess noise in transition-edge sensors on a solid silicon substrate",

abstract = "Transition-edge sensors (TESs) exhibit two major types of excess noise above the expected and unavoidable thermodynamic fluctuation noise (TFN) to the heat sink and Johnson noise. High-resistance TESs such as those made by the Netherlands Institute for Space Research (SRON) show excess noise consistent with internal TFN (ITFN) caused by random energy transport within the TES itself while low resistance TESs show an excess voltage noise of unknown origin seemingly unrelated to temperature fluctuations. Running a high-resistance TES on a high thermal conductivity substrate should suppress ITFN and allow detection of any excess voltage noise. We tested two TESs on a solid silicon substrate fabricated by SRON of a relatively high normal state resistance of ∼200 mΩ. After determining a linear model of the TES response to noise for the devices, we found little excess TFN and little excess voltage noise for bias currents of up to ∼20 μA.",

keywords = "Calorimeter, Excess noise, Transition edge sensor, Unsuspended device",

author = "Crowder, {S. G.} and Lindeman, {M. A.} and Anderson, {M. B.} and Bandler, {S. R.} and N. Bilgri and Bruijn, {M. P.} and J. Chervenak and E. Figueroa-Feliciano and F. Finkbeiner and A. Germeau and Hoevers, {H. F C} and N. Iyomoto and R. Kelly and Kilbourne, {C. A.} and T. Lai and J. Man and D. McCammon and Nelms, {K. L.} and Porter, {F. S.} and L. Rocks and T. Saab and J. Sadleir and G. Vidugiris",

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doi = "10.1016/j.nima.2005.12.117",

language = "English (US)",

volume = "559",

pages = "721--723",

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Crowder, SG, Lindeman, MA, Anderson, MB, Bandler, SR, Bilgri, N, Bruijn, MP, Chervenak, J, Figueroa-Feliciano, E, Finkbeiner, F, Germeau, A, Hoevers, HFC, Iyomoto, N, Kelly, R, Kilbourne, CA, Lai, T, Man, J, McCammon, D, Nelms, KL, Porter, FS, Rocks, L, Saab, T, Sadleir, J & Vidugiris, G 2006, 'An investigation of excess noise in transition-edge sensors on a solid silicon substrate', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 559, no. 2, pp. 721-723. https://doi.org/10.1016/j.nima.2005.12.117

An investigation of excess noise in transition-edge sensors on a solid silicon substrate. / Crowder, S. G.; Lindeman, M. A.; Anderson, M. B. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 559, No. 2, 14.04.2006, p. 721-723.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - An investigation of excess noise in transition-edge sensors on a solid silicon substrate

AU - Crowder, S. G.

AU - Lindeman, M. A.

AU - Anderson, M. B.

AU - Bandler, S. R.

AU - Bilgri, N.

AU - Bruijn, M. P.

AU - Chervenak, J.

AU - Figueroa-Feliciano, E.

AU - Finkbeiner, F.

AU - Germeau, A.

AU - Hoevers, H. F C

AU - Iyomoto, N.

AU - Kelly, R.

AU - Kilbourne, C. A.

AU - Lai, T.

AU - Man, J.

AU - McCammon, D.

AU - Nelms, K. L.

AU - Porter, F. S.

AU - Rocks, L.

AU - Saab, T.

AU - Sadleir, J.

AU - Vidugiris, G.

PY - 2006/4/14

Y1 - 2006/4/14

N2 - Transition-edge sensors (TESs) exhibit two major types of excess noise above the expected and unavoidable thermodynamic fluctuation noise (TFN) to the heat sink and Johnson noise. High-resistance TESs such as those made by the Netherlands Institute for Space Research (SRON) show excess noise consistent with internal TFN (ITFN) caused by random energy transport within the TES itself while low resistance TESs show an excess voltage noise of unknown origin seemingly unrelated to temperature fluctuations. Running a high-resistance TES on a high thermal conductivity substrate should suppress ITFN and allow detection of any excess voltage noise. We tested two TESs on a solid silicon substrate fabricated by SRON of a relatively high normal state resistance of ∼200 mΩ. After determining a linear model of the TES response to noise for the devices, we found little excess TFN and little excess voltage noise for bias currents of up to ∼20 μA.

AB - Transition-edge sensors (TESs) exhibit two major types of excess noise above the expected and unavoidable thermodynamic fluctuation noise (TFN) to the heat sink and Johnson noise. High-resistance TESs such as those made by the Netherlands Institute for Space Research (SRON) show excess noise consistent with internal TFN (ITFN) caused by random energy transport within the TES itself while low resistance TESs show an excess voltage noise of unknown origin seemingly unrelated to temperature fluctuations. Running a high-resistance TES on a high thermal conductivity substrate should suppress ITFN and allow detection of any excess voltage noise. We tested two TESs on a solid silicon substrate fabricated by SRON of a relatively high normal state resistance of ∼200 mΩ. After determining a linear model of the TES response to noise for the devices, we found little excess TFN and little excess voltage noise for bias currents of up to ∼20 μA.

KW - Calorimeter

KW - Excess noise

KW - Transition edge sensor

KW - Unsuspended device

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U2 - 10.1016/j.nima.2005.12.117

DO - 10.1016/j.nima.2005.12.117

M3 - Article

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VL - 559

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 2

ER -

An investigation of excess noise in transition-edge sensors on a solid silicon substrate

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