An opto-electro-mechanical infrared photon detector with high internal gain at room temperature

Many applications require detectors with both high sensitivity and linearity, such as low light level imaging and quantum computing. Here we present an opto-electro-mechanical detector based on nano-injection and lateral charge compression that operates at the short infrared (SWIR) range. Electrical signal is generated by photo-induced changes in a nano-injector gap, and subsequent change of tunneling current. We present a theoretical model developed for the OEM detector, and it shows good agreement with the measured experimental results for both the mechanical and electrical properties of the device. The device shows a measured responsivity of 276 A/W, equivalent to 220 electrons per incoming photon, and an NEP of 3.53 x 10^□14 W/Hz^0,5 at room temperature. Although these results are already competing with common APDs in linear mode, we believe replacing the AFM tip with a dedicated nanoinjector can improve the sensitivity significantly.