An opto-electro-mechanical infrared photon detector with high internal gain at room temperature

John Kohoutek*, Ivy Yoke Leng Wan, Omer Gokalp Memis, Hooman Mohseni

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Many applications require detectors with both high sensitivity and linearity, such as low light level imaging and quantum computing. Here we present an opto-electro-mechanical detector based on nano-injection and lateral charge compression that operates at the short infrared (SWIR) range. Electrical signal is generated by photo-induced changes in a nano-injector gap, and subsequent change of tunneling current. We present a theoretical model developed for the OEM detector, and it shows good agreement with the measured experimental results for both the mechanical and electrical properties of the device. The device shows a measured responsivity of 276 A/W, equivalent to 220 electrons per incoming photon, and an NEP of 3.53 x 10□14 W/Hz0,5 at room temperature. Although these results are already competing with common APDs in linear mode, we believe replacing the AFM tip with a dedicated nanoinjector can improve the sensitivity significantly.

Original languageEnglish (US)
Pages (from-to)14458-14465
Number of pages8
JournalOptics Express
Volume17
Issue number17
DOIs
StatePublished - Aug 17 2009

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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