Abstract
An ultra high vacuum system has been designed and constructed for the purpose of depositing high-quality oxide films on well-characterized crystal surfaces at low temperatures. In particular, aluminum phosphorus oxide films have been deposited on both InP and Ge surfaces for the purpose of device application. Electrical measurements of metal-oxide-semiconductor structures show much improved interfacial properties with little or no hysteresis.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 951-957 |
| Number of pages | 7 |
| Journal | Journal of Materials Research |
| Volume | 3 |
| Issue number | 5 |
| DOIs | |
| State | Published - Oct 1988 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering