An ultra high vacuum system for thin dielectric film deposition at low temperatures

R P H Chang, G. Griffiths

Research output: Contribution to journalArticle

Abstract

An ultra high vacuum system has been designed and constructed for the purpose of depositing high-quality oxide films on well-characterized crystal surfaces at low temperatures. In particular, aluminum phosphorus oxide films have been deposited on both InP and Ge surfaces for the purpose of device application. Electrical measurements of metal-oxide-semiconductor structures show much improved interfacial properties with little or no hysteresis.

Original languageEnglish (US)
Pages (from-to)951-957
Number of pages7
JournalJournal of Materials Research
Volume3
Issue number5
DOIs
StatePublished - Jan 1 1988

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'An ultra high vacuum system for thin dielectric film deposition at low temperatures'. Together they form a unique fingerprint.

  • Cite this