An X-ray study of domain structure and stress in Pd2Si films at Pd-Si interfaces

Haydn Chen*, G. E. White, S. R. Stock, P. S. Ho

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The domain structures of palladium and Pd2Si as well as their crystallographic relationship to the silicon substrates were determined on Si(111) and Si(100) samples by mapping X-ray diffraction pole figures. X-ray diffraction topography and rocking curve measurements were carried out for the silicon substrates in order to detect the presence of elastic and/or plastic deformation in the substrates caused by silicide formation. The stresses in the silicide films were determined from the bending of the silicon substrates using X-ray diffraction techniques.

Original languageEnglish (US)
Pages (from-to)161-169
Number of pages9
JournalThin Solid Films
Volume93
Issue number1-2
DOIs
StatePublished - Jul 9 1982

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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