Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length

Arash Dehzangi; Farhad Larki; M. F. Mohd Razip Wee; Nicolas Wichmann; Burhanuddin Y. Majlis; Sylvain Bollaert

doi:10.1007/s11664-016-4964-9

Analog/RF Study of Self-aligned In_0.53Ga_0.47As MOSFET with Scaled Gate Length

Arash Dehzangi^*, Farhad Larki, M. F. Mohd Razip Wee, Nicolas Wichmann, Burhanuddin Y. Majlis, Sylvain Bollaert

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This study presents the impact of gate length scaling on analog and radio frequency (RF) performance of a self- aligned multi-gate n-type In_0.53Ga_0.47As metal oxide semiconductor field effect transistor. The device is fabricated using a self-aligned method, air-bridge technology, and 8 nm thickness of the Al₂O₃ oxide layer with different gate lengths. The transconductance-to-normalized drain current ratio (g_m/I_D) method is implemented to investigate analog parameters. Moreover, g_m and drain conductance (g_D) as key parameters in analog performance of the device are evaluated with g_m/I_D and gate length variation, where g_m and g_D are both showing enhancement due to scaling of the gate length. Early voltage (V_EA) and intrinsic voltage gain (A_V) value presents a decreasing trend by shrinking the gate length. In addition, the results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

Original language	English (US)
Pages (from-to)	782-789
Number of pages	8
Journal	Journal of Electronic Materials
Volume	46
Issue number	2
DOIs	https://doi.org/10.1007/s11664-016-4964-9
State	Published - Feb 1 2017

Keywords

Self-aligned InGaAs MOSFET
analog performance
intrinsic voltage gain
transconductance
transconductance-to-normalized drain current ratio

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-016-4964-9

Cite this

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title = "Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length",

abstract = "This study presents the impact of gate length scaling on analog and radio frequency (RF) performance of a self- aligned multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor. The device is fabricated using a self-aligned method, air-bridge technology, and 8 nm thickness of the Al2O3 oxide layer with different gate lengths. The transconductance-to-normalized drain current ratio (gm/ID) method is implemented to investigate analog parameters. Moreover, gm and drain conductance (gD) as key parameters in analog performance of the device are evaluated with gm/ID and gate length variation, where gm and gD are both showing enhancement due to scaling of the gate length. Early voltage (VEA) and intrinsic voltage gain (AV) value presents a decreasing trend by shrinking the gate length. In addition, the results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.",

keywords = "Self-aligned InGaAs MOSFET, analog performance, intrinsic voltage gain, transconductance, transconductance-to-normalized drain current ratio",

author = "Arash Dehzangi and Farhad Larki and {Mohd Razip Wee}, {M. F.} and Nicolas Wichmann and Majlis, {Burhanuddin Y.} and Sylvain Bollaert",

note = "Publisher Copyright: {\textcopyright} 2016, The Minerals, Metals & Materials Society.",

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AU - Dehzangi, Arash

AU - Larki, Farhad

AU - Mohd Razip Wee, M. F.

AU - Wichmann, Nicolas

AU - Majlis, Burhanuddin Y.

AU - Bollaert, Sylvain

PY - 2017/2/1

Y1 - 2017/2/1

N2 - This study presents the impact of gate length scaling on analog and radio frequency (RF) performance of a self- aligned multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor. The device is fabricated using a self-aligned method, air-bridge technology, and 8 nm thickness of the Al2O3 oxide layer with different gate lengths. The transconductance-to-normalized drain current ratio (gm/ID) method is implemented to investigate analog parameters. Moreover, gm and drain conductance (gD) as key parameters in analog performance of the device are evaluated with gm/ID and gate length variation, where gm and gD are both showing enhancement due to scaling of the gate length. Early voltage (VEA) and intrinsic voltage gain (AV) value presents a decreasing trend by shrinking the gate length. In addition, the results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

AB - This study presents the impact of gate length scaling on analog and radio frequency (RF) performance of a self- aligned multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor. The device is fabricated using a self-aligned method, air-bridge technology, and 8 nm thickness of the Al2O3 oxide layer with different gate lengths. The transconductance-to-normalized drain current ratio (gm/ID) method is implemented to investigate analog parameters. Moreover, gm and drain conductance (gD) as key parameters in analog performance of the device are evaluated with gm/ID and gate length variation, where gm and gD are both showing enhancement due to scaling of the gate length. Early voltage (VEA) and intrinsic voltage gain (AV) value presents a decreasing trend by shrinking the gate length. In addition, the results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

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