Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length

Arash Dehzangi*, Farhad Larki, M. F. Mohd Razip Wee, Nicolas Wichmann, Burhanuddin Y. Majlis, Sylvain Bollaert

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This study presents the impact of gate length scaling on analog and radio frequency (RF) performance of a self- aligned multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor. The device is fabricated using a self-aligned method, air-bridge technology, and 8 nm thickness of the Al2O3 oxide layer with different gate lengths. The transconductance-to-normalized drain current ratio (gm/ID) method is implemented to investigate analog parameters. Moreover, gm and drain conductance (gD) as key parameters in analog performance of the device are evaluated with gm/ID and gate length variation, where gm and gD are both showing enhancement due to scaling of the gate length. Early voltage (VEA) and intrinsic voltage gain (AV) value presents a decreasing trend by shrinking the gate length. In addition, the results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

Original languageEnglish (US)
Pages (from-to)782-789
Number of pages8
JournalJournal of Electronic Materials
Volume46
Issue number2
DOIs
StatePublished - Feb 1 2017

Keywords

  • Self-aligned InGaAs MOSFET
  • analog performance
  • intrinsic voltage gain
  • transconductance
  • transconductance-to-normalized drain current ratio

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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