Analysis and simulation of extended hydrodynamic models: The multi-valley gunn oscillator and MESFET symmetries

Gui Qiang Chen*, Joseph W. Jerome, Chi Wang Shu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We introduce a novel two carrier hydrodynamic model, which incorporates higher dimensional geometric effects into a one dimensional model. We study (1) the GaAs device in the notched oscillator circuit, and, (2) a MESFET channel, and its symmetries. We present new mathematical results for a reduced model.

Original languageEnglish (US)
Pages (from-to)277-282
Number of pages6
JournalVLSI Design
Volume6
Issue number1-4
DOIs
StatePublished - 1998

Keywords

  • Geometric structure terms
  • Gunn oscillator
  • MESFET
  • Symmery
  • Two carrier hydrodynamic model

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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