Analysis and simulation of extended hydrodynamic models: The multi-valley gunn oscillator and MESFET symmetries

Gui Qiang Chen; Joseph W. Jerome; Chi Wang Shu

doi:10.1155/1998/21818

Analysis and simulation of extended hydrodynamic models: The multi-valley gunn oscillator and MESFET symmetries

Gui Qiang Chen^*, Joseph W. Jerome, Chi Wang Shu

^*Corresponding author for this work

Mathematics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We introduce a novel two carrier hydrodynamic model, which incorporates higher dimensional geometric effects into a one dimensional model. We study (1) the GaAs device in the notched oscillator circuit, and, (2) a MESFET channel, and its symmetries. We present new mathematical results for a reduced model.

Original language	English (US)
Pages (from-to)	277-282
Number of pages	6
Journal	VLSI Design
Volume	6
Issue number	1-4
DOIs	https://doi.org/10.1155/1998/21818
State	Published - 1998

Keywords

Geometric structure terms
Gunn oscillator
MESFET
Symmery
Two carrier hydrodynamic model

ASJC Scopus subject areas

Hardware and Architecture
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

Access to Document

10.1155/1998/21818

Cite this

@article{7b7324ea37e646bcb2835c61bc2c8508,

title = "Analysis and simulation of extended hydrodynamic models: The multi-valley gunn oscillator and MESFET symmetries",

abstract = "We introduce a novel two carrier hydrodynamic model, which incorporates higher dimensional geometric effects into a one dimensional model. We study (1) the GaAs device in the notched oscillator circuit, and, (2) a MESFET channel, and its symmetries. We present new mathematical results for a reduced model.",

keywords = "Geometric structure terms, Gunn oscillator, MESFET, Symmery, Two carrier hydrodynamic model",

author = "Chen, {Gui Qiang} and Jerome, {Joseph W.} and Shu, {Chi Wang}",

year = "1998",

doi = "10.1155/1998/21818",

language = "English (US)",

volume = "6",

pages = "277--282",

journal = "VLSI Design",

issn = "1065-514X",

publisher = "Hindawi Publishing Corporation",

number = "1-4",

}

TY - JOUR

T1 - Analysis and simulation of extended hydrodynamic models

T2 - The multi-valley gunn oscillator and MESFET symmetries

AU - Chen, Gui Qiang

AU - Jerome, Joseph W.

AU - Shu, Chi Wang

PY - 1998

Y1 - 1998

N2 - We introduce a novel two carrier hydrodynamic model, which incorporates higher dimensional geometric effects into a one dimensional model. We study (1) the GaAs device in the notched oscillator circuit, and, (2) a MESFET channel, and its symmetries. We present new mathematical results for a reduced model.

AB - We introduce a novel two carrier hydrodynamic model, which incorporates higher dimensional geometric effects into a one dimensional model. We study (1) the GaAs device in the notched oscillator circuit, and, (2) a MESFET channel, and its symmetries. We present new mathematical results for a reduced model.

KW - Geometric structure terms

KW - Gunn oscillator

KW - MESFET

KW - Symmery

KW - Two carrier hydrodynamic model

UR - http://www.scopus.com/inward/record.url?scp=0031645392&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031645392&partnerID=8YFLogxK

U2 - 10.1155/1998/21818

DO - 10.1155/1998/21818

M3 - Article

AN - SCOPUS:0031645392

SN - 1065-514X

VL - 6

SP - 277

EP - 282

JO - VLSI Design

JF - VLSI Design

IS - 1-4

ER -

Analysis and simulation of extended hydrodynamic models: The multi-valley gunn oscillator and MESFET symmetries

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this