Analysis of Carrier Transport in n-Type Hg1−xCdxTe with Ultra-Low Doping Concentration

Justin Easley*, Erdem Arkun, Boya Cui, Michael Carmody, Lintao Peng, Matthew Grayson, Jamie Phillips

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Mercury cadmium telluride (HgCdTe, or MCT) with low n-type indium doping concentration offers a means for obtaining high performance infrared detectors. Characterizing carrier transport in materials with ultra low doping (ND = 1014 cm−3 and lower), and multi-layer material structures designed for infrared detector devices, is particularly challenging using traditional methods. In this work, Hall effect measurements with a swept B-field were used in conjunction with a multi-carrier fitting procedure and Fourier-domain mobility spectrum analysis to analyze multi-layered MCT samples. Low temperature measurements (77 K) were able to identify multiple carrier species, including an epitaxial layer (x = 0.2195) with n-type carrier concentration of n = 1 × 1014 cm−3 and electron mobility of μ = 280000 cm2/Vs. The extracted electron mobility matches or exceeds prior empirical models for MCT, illustrating the outstanding material quality achievable using current epitaxial growth methods, and motivating further study to revisit previously published material parameters for MCT carrier transport. The high material quality is further demonstrated via observation of the quantum Hall effect at low temperature (5 K and below).

Original languageEnglish (US)
Pages (from-to)5699-5704
Number of pages6
JournalJournal of Electronic Materials
Volume47
Issue number10
DOIs
StatePublished - Oct 1 2018

Keywords

  • Fourier-domain mobility spectrum analysis
  • HgCdTe
  • Mercury cadmium telluride
  • low doping
  • magnetotransport
  • multi-carrier fitting

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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