Analysis of Carrier Transport in Quantum Dot/Metal-Oxide Phototransistors via Light-Mediated Interfacial Modeling

Joon Bee Park; Jaehyun Kim; Young Woo Jang; Hun Bum Park; Seong Hwan Yang; Dae Hwan Kim; Myunggil Kim; Antonio Facchetti; Sung Kyu Park

doi:10.1002/adom.202201559

Analysis of Carrier Transport in Quantum Dot/Metal-Oxide Phototransistors via Light-Mediated Interfacial Modeling

Joon Bee Park, Jaehyun Kim, Young Woo Jang, Hun Bum Park, Seong Hwan Yang, Dae Hwan Kim, Myunggil Kim, Antonio Facchetti^*, Sung Kyu Park^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Quantum dot (QD) hybrid phototransistors based on high-mobility channel semiconductors have attracted great interest due to their outstanding photonic characteristics with diverse and broadband optoelectronic functionalities. However, difficulties for precise control of electronic coupling between QD particles and lack of QD/semiconductor interface analysis have limited the use of these platforms into practical optoelectronic applications. Here, the authors report a new strategy to high-performance phototransistors based on CdSe QD/amorphous oxide semiconductor heterostructures using trap-reduced chelating chalcometallate surface ligands by optimizing the QD layer thickness and interface engineering to enhance photogenerated charge transfer properties. Furthermore, based on performance parameters extracted from experimental structure and electrical characteristics, Technology Computer-Aided Design (TCAD) modeling reveals carrier flow between the QDs in the semiconductor layer in agreement with various spectroscopic data. These modeling results indicate that interface engineering of QD with chalcometallate ligand results in very efficient photo-induced charge transfer characteristics. Thus, high-performance chalcometallate ligand QD-based phototransistors are successfully realized with enhanced responsivity (2.12 × 10⁴ A W⁻¹) and photodetectivity (2.74 × 10¹⁶ Jones) compared with conventional monodentate ligand functionalized (SCN⁻) QD-based devices (8.79 × 10³ A W⁻¹ and 8.8 × 10¹⁰ Jones, respectively). This is the demonstration of systematic analysis of QD-based hetero-structured phototransistors with light-mediated interfacial physical modeling and electrochemical measurement.

Original language	English (US)
Article number	2201559
Journal	Advanced Optical Materials
Volume	11
Issue number	1
DOIs	https://doi.org/10.1002/adom.202201559
State	Published - Jan 4 2023

Funding

J.B.P. and J.K. contributed equally to this work. This research was partially supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. NRF‐2019R1A2C2002447), by the Technology Innovation Program (20012617, Core technology development of CMOS device fabrication using non‐silicon semiconductor thin film transistors for high resolution large area display) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea), and by the Chung‐Ang University Graduate Research Scholarship in 2021.

Keywords

TCAD simulation
colloidal quantum dots
indium−gallium−zinc−oxide
ligand exchange
phototransistors
technology computer-aided design
thickness modulation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1002/adom.202201559

Cite this

@article{e699676d505b425d90b40d19e9ed9d20,

title = "Analysis of Carrier Transport in Quantum Dot/Metal-Oxide Phototransistors via Light-Mediated Interfacial Modeling",

abstract = "Quantum dot (QD) hybrid phototransistors based on high-mobility channel semiconductors have attracted great interest due to their outstanding photonic characteristics with diverse and broadband optoelectronic functionalities. However, difficulties for precise control of electronic coupling between QD particles and lack of QD/semiconductor interface analysis have limited the use of these platforms into practical optoelectronic applications. Here, the authors report a new strategy to high-performance phototransistors based on CdSe QD/amorphous oxide semiconductor heterostructures using trap-reduced chelating chalcometallate surface ligands by optimizing the QD layer thickness and interface engineering to enhance photogenerated charge transfer properties. Furthermore, based on performance parameters extracted from experimental structure and electrical characteristics, Technology Computer-Aided Design (TCAD) modeling reveals carrier flow between the QDs in the semiconductor layer in agreement with various spectroscopic data. These modeling results indicate that interface engineering of QD with chalcometallate ligand results in very efficient photo-induced charge transfer characteristics. Thus, high-performance chalcometallate ligand QD-based phototransistors are successfully realized with enhanced responsivity (2.12 × 104 A W−1) and photodetectivity (2.74 × 1016 Jones) compared with conventional monodentate ligand functionalized (SCN−) QD-based devices (8.79 × 103 A W−1 and 8.8 × 1010 Jones, respectively). This is the demonstration of systematic analysis of QD-based hetero-structured phototransistors with light-mediated interfacial physical modeling and electrochemical measurement.",

keywords = "TCAD simulation, colloidal quantum dots, indium−gallium−zinc−oxide, ligand exchange, phototransistors, technology computer-aided design, thickness modulation",

author = "Park, {Joon Bee} and Jaehyun Kim and Jang, {Young Woo} and Park, {Hun Bum} and Yang, {Seong Hwan} and Kim, {Dae Hwan} and Myunggil Kim and Antonio Facchetti and Park, {Sung Kyu}",

note = "Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.",

year = "2023",

month = jan,

day = "4",

doi = "10.1002/adom.202201559",

language = "English (US)",

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T1 - Analysis of Carrier Transport in Quantum Dot/Metal-Oxide Phototransistors via Light-Mediated Interfacial Modeling

AU - Park, Joon Bee

AU - Kim, Jaehyun

AU - Jang, Young Woo

AU - Park, Hun Bum

AU - Yang, Seong Hwan

AU - Kim, Dae Hwan

AU - Kim, Myunggil

AU - Facchetti, Antonio

AU - Park, Sung Kyu

PY - 2023/1/4

Y1 - 2023/1/4

N2 - Quantum dot (QD) hybrid phototransistors based on high-mobility channel semiconductors have attracted great interest due to their outstanding photonic characteristics with diverse and broadband optoelectronic functionalities. However, difficulties for precise control of electronic coupling between QD particles and lack of QD/semiconductor interface analysis have limited the use of these platforms into practical optoelectronic applications. Here, the authors report a new strategy to high-performance phototransistors based on CdSe QD/amorphous oxide semiconductor heterostructures using trap-reduced chelating chalcometallate surface ligands by optimizing the QD layer thickness and interface engineering to enhance photogenerated charge transfer properties. Furthermore, based on performance parameters extracted from experimental structure and electrical characteristics, Technology Computer-Aided Design (TCAD) modeling reveals carrier flow between the QDs in the semiconductor layer in agreement with various spectroscopic data. These modeling results indicate that interface engineering of QD with chalcometallate ligand results in very efficient photo-induced charge transfer characteristics. Thus, high-performance chalcometallate ligand QD-based phototransistors are successfully realized with enhanced responsivity (2.12 × 104 A W−1) and photodetectivity (2.74 × 1016 Jones) compared with conventional monodentate ligand functionalized (SCN−) QD-based devices (8.79 × 103 A W−1 and 8.8 × 1010 Jones, respectively). This is the demonstration of systematic analysis of QD-based hetero-structured phototransistors with light-mediated interfacial physical modeling and electrochemical measurement.

AB - Quantum dot (QD) hybrid phototransistors based on high-mobility channel semiconductors have attracted great interest due to their outstanding photonic characteristics with diverse and broadband optoelectronic functionalities. However, difficulties for precise control of electronic coupling between QD particles and lack of QD/semiconductor interface analysis have limited the use of these platforms into practical optoelectronic applications. Here, the authors report a new strategy to high-performance phototransistors based on CdSe QD/amorphous oxide semiconductor heterostructures using trap-reduced chelating chalcometallate surface ligands by optimizing the QD layer thickness and interface engineering to enhance photogenerated charge transfer properties. Furthermore, based on performance parameters extracted from experimental structure and electrical characteristics, Technology Computer-Aided Design (TCAD) modeling reveals carrier flow between the QDs in the semiconductor layer in agreement with various spectroscopic data. These modeling results indicate that interface engineering of QD with chalcometallate ligand results in very efficient photo-induced charge transfer characteristics. Thus, high-performance chalcometallate ligand QD-based phototransistors are successfully realized with enhanced responsivity (2.12 × 104 A W−1) and photodetectivity (2.74 × 1016 Jones) compared with conventional monodentate ligand functionalized (SCN−) QD-based devices (8.79 × 103 A W−1 and 8.8 × 1010 Jones, respectively). This is the demonstration of systematic analysis of QD-based hetero-structured phototransistors with light-mediated interfacial physical modeling and electrochemical measurement.

KW - TCAD simulation

KW - colloidal quantum dots

KW - indium−gallium−zinc−oxide

KW - ligand exchange

KW - phototransistors

KW - technology computer-aided design

KW - thickness modulation

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IS - 1

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Analysis of Carrier Transport in Quantum Dot/Metal-Oxide Phototransistors via Light-Mediated Interfacial Modeling

Abstract

Funding

Keywords

ASJC Scopus subject areas

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