Analysis of GaAs(001) surface stoichiometry using Monte Carlo simulations

R. Kaspi*, S. A. Barnett

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

A Monte Carlo (MC) simulation model of the GaAs(001) surface has been developed that provides a unified, quantitative explanation of experimental arsenic flash desorption, modulated beam desorption, and steady-state coverage results. The As2 desorption energy EAs decreased with increasing As coverage. EAs = 3.9 eV with a frequency factor of 2 × 1021 s-1 was used isolated As adatom pairs, EAs for As pairs with As neighbors was decreased by 0.12 eV per neighbor. Surface diffusion of gallium with attractive GaGa interactions, leading to flat surfaces during growth or evaporation from the surface, was also necessary to fit the arsenic desorption results. Diffusion of physisorbed Ga and As4 (or As2) was shown to be a necessary element of the model. Most of the parameters needed to simulate GaAs growth have been determined by fitting the desorption results.

Original languageEnglish (US)
Pages (from-to)146-156
Number of pages11
JournalSurface Science
Volume241
Issue number1-2
DOIs
StatePublished - Jan 1 1991

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Analysis of GaAs(001) surface stoichiometry using Monte Carlo simulations'. Together they form a unique fingerprint.

Cite this