Analysis of GaAs(001) surface stoichiometry using Monte Carlo simulations

R. Kaspi; S. A. Barnett

doi:10.1016/0039-6028(91)90219-I

Analysis of GaAs(001) surface stoichiometry using Monte Carlo simulations

R. Kaspi^*, S. A. Barnett

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A Monte Carlo (MC) simulation model of the GaAs(001) surface has been developed that provides a unified, quantitative explanation of experimental arsenic flash desorption, modulated beam desorption, and steady-state coverage results. The As₂ desorption energy E_As decreased with increasing As coverage. E_As = 3.9 eV with a frequency factor of 2 × 10²¹ s^-1 was used isolated As adatom pairs, E_As for As pairs with As neighbors was decreased by 0.12 eV per neighbor. Surface diffusion of gallium with attractive GaGa interactions, leading to flat surfaces during growth or evaporation from the surface, was also necessary to fit the arsenic desorption results. Diffusion of physisorbed Ga and As₄ (or As₂) was shown to be a necessary element of the model. Most of the parameters needed to simulate GaAs growth have been determined by fitting the desorption results.

Original language	English (US)
Pages (from-to)	146-156
Number of pages	11
Journal	Surface Science
Volume	241
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(91)90219-I
State	Published - Jan 1 1991

Funding

The authors gratefully acknowledge financial support by the National Science Foundation through the Northwestern University Materials Research Center, Grant No. DMR 8821571, and by the Office of Naval Research under contract No. N00014-86-K-0629.

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(91)90219-I

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title = "Analysis of GaAs(001) surface stoichiometry using Monte Carlo simulations",

abstract = "A Monte Carlo (MC) simulation model of the GaAs(001) surface has been developed that provides a unified, quantitative explanation of experimental arsenic flash desorption, modulated beam desorption, and steady-state coverage results. The As2 desorption energy EAs decreased with increasing As coverage. EAs = 3.9 eV with a frequency factor of 2 × 1021 s-1 was used isolated As adatom pairs, EAs for As pairs with As neighbors was decreased by 0.12 eV per neighbor. Surface diffusion of gallium with attractive GaGa interactions, leading to flat surfaces during growth or evaporation from the surface, was also necessary to fit the arsenic desorption results. Diffusion of physisorbed Ga and As4 (or As2) was shown to be a necessary element of the model. Most of the parameters needed to simulate GaAs growth have been determined by fitting the desorption results.",

author = "R. Kaspi and Barnett, {S. A.}",

note = "Funding Information: The authors gratefully acknowledge financial support by the National Science Foundation through the Northwestern University Materials Research Center, Grant No. DMR 8821571, and by the Office of Naval Research under contract No. N00014-86-K-0629.",

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doi = "10.1016/0039-6028(91)90219-I",

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T1 - Analysis of GaAs(001) surface stoichiometry using Monte Carlo simulations

AU - Kaspi, R.

AU - Barnett, S. A.

N1 - Funding Information: The authors gratefully acknowledge financial support by the National Science Foundation through the Northwestern University Materials Research Center, Grant No. DMR 8821571, and by the Office of Naval Research under contract No. N00014-86-K-0629.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - A Monte Carlo (MC) simulation model of the GaAs(001) surface has been developed that provides a unified, quantitative explanation of experimental arsenic flash desorption, modulated beam desorption, and steady-state coverage results. The As2 desorption energy EAs decreased with increasing As coverage. EAs = 3.9 eV with a frequency factor of 2 × 1021 s-1 was used isolated As adatom pairs, EAs for As pairs with As neighbors was decreased by 0.12 eV per neighbor. Surface diffusion of gallium with attractive GaGa interactions, leading to flat surfaces during growth or evaporation from the surface, was also necessary to fit the arsenic desorption results. Diffusion of physisorbed Ga and As4 (or As2) was shown to be a necessary element of the model. Most of the parameters needed to simulate GaAs growth have been determined by fitting the desorption results.

AB - A Monte Carlo (MC) simulation model of the GaAs(001) surface has been developed that provides a unified, quantitative explanation of experimental arsenic flash desorption, modulated beam desorption, and steady-state coverage results. The As2 desorption energy EAs decreased with increasing As coverage. EAs = 3.9 eV with a frequency factor of 2 × 1021 s-1 was used isolated As adatom pairs, EAs for As pairs with As neighbors was decreased by 0.12 eV per neighbor. Surface diffusion of gallium with attractive GaGa interactions, leading to flat surfaces during growth or evaporation from the surface, was also necessary to fit the arsenic desorption results. Diffusion of physisorbed Ga and As4 (or As2) was shown to be a necessary element of the model. Most of the parameters needed to simulate GaAs growth have been determined by fitting the desorption results.

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JO - Surface Science

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Analysis of GaAs(001) surface stoichiometry using Monte Carlo simulations

Abstract

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