Keyphrases
Quantum Dots
100%
Metal Oxide
100%
Metal Chalcogenides
100%
Low-frequency Noise
100%
Phototransistor
100%
Amorphous InGaZnO (a-IGZO)
75%
Ohmic
50%
CdTe Quantum Dots
50%
Saturation Regime
50%
Electro-optical Characteristics
50%
Nanomaterials
25%
Surface Ligands
25%
Heterostructure
25%
Meaningful Information
25%
Responsivity
25%
Fluctuation Model
25%
Thiocyanate
25%
Noise Analysis
25%
Ligand-based
25%
Noise Properties
25%
Subthreshold Regime
25%
Low Frequency Noise Measurements
25%
Mobility Fluctuation
25%
Fluctuation Mechanism
25%
Photodetectivity
25%
Hybrid Phototransistor
25%
Carrier number Fluctuations
25%
Bulk Mobility
25%
Material Science
Metal Oxide
100%
Metal Chalcogenides
100%
Quantum Dot
100%
Zinc Oxide
60%
Indium
60%
Gallium
60%
Nanostructured Material
20%
Surface (Surface Science)
20%
Chemical Engineering
Indium
100%
Chalcogenides
100%
Zinc Oxide
100%