Analysis of mode characteristics for equilateral triangle semiconductor microlasers with imperfect boundaries

Y. Z. Huang; Q. Y. Lu; W. H. Guo; L. J. Yu

doi:10.1049/ip-opt:20040671

Analysis of mode characteristics for equilateral triangle semiconductor microlasers with imperfect boundaries

Y. Z. Huang^*, Q. Y. Lu, W. H. Guo, L. J. Yu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The influence of imperfect boundaries on the mode quality factor is investigated for equilateral-triangle-resonator (ETR) semiconductor microlasers by the finite difference time domain technique and the Padé approximation with Baker's algorithm. For 2-D ETR with a refractive index of 3.2 and side length of 5 μm, the confined modes can still have a quality factor of about 1000 as small triangles with side length of 1 μm are cut from the vertices of the ETR. For a deformed 5 μm ETR with round vertices and curve sides, the simulated mode quality factors are comparable to the measured results.

Original language	English (US)
Pages (from-to)	202-204
Number of pages	3
Journal	IEE Proceedings: Optoelectronics
Volume	151
Issue number	4
DOIs	https://doi.org/10.1049/ip-opt:20040671
State	Published - Aug 1 2004

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Electrical and Electronic Engineering

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@article{7c870ff8755441178a543b1132811833,

title = "Analysis of mode characteristics for equilateral triangle semiconductor microlasers with imperfect boundaries",

abstract = "The influence of imperfect boundaries on the mode quality factor is investigated for equilateral-triangle-resonator (ETR) semiconductor microlasers by the finite difference time domain technique and the Pad{\'e} approximation with Baker's algorithm. For 2-D ETR with a refractive index of 3.2 and side length of 5 μm, the confined modes can still have a quality factor of about 1000 as small triangles with side length of 1 μm are cut from the vertices of the ETR. For a deformed 5 μm ETR with round vertices and curve sides, the simulated mode quality factors are comparable to the measured results.",

author = "Huang, {Y. Z.} and Lu, {Q. Y.} and Guo, {W. H.} and Yu, {L. J.}",

year = "2004",

month = aug,

day = "1",

doi = "10.1049/ip-opt:20040671",

language = "English (US)",

volume = "151",

pages = "202--204",

journal = "IEE Proceedings: Optoelectronics",

issn = "1350-2433",

publisher = "Institute of Electrical Engineers",

number = "4",

}

TY - JOUR

T1 - Analysis of mode characteristics for equilateral triangle semiconductor microlasers with imperfect boundaries

AU - Huang, Y. Z.

AU - Lu, Q. Y.

AU - Guo, W. H.

AU - Yu, L. J.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - The influence of imperfect boundaries on the mode quality factor is investigated for equilateral-triangle-resonator (ETR) semiconductor microlasers by the finite difference time domain technique and the Padé approximation with Baker's algorithm. For 2-D ETR with a refractive index of 3.2 and side length of 5 μm, the confined modes can still have a quality factor of about 1000 as small triangles with side length of 1 μm are cut from the vertices of the ETR. For a deformed 5 μm ETR with round vertices and curve sides, the simulated mode quality factors are comparable to the measured results.

AB - The influence of imperfect boundaries on the mode quality factor is investigated for equilateral-triangle-resonator (ETR) semiconductor microlasers by the finite difference time domain technique and the Padé approximation with Baker's algorithm. For 2-D ETR with a refractive index of 3.2 and side length of 5 μm, the confined modes can still have a quality factor of about 1000 as small triangles with side length of 1 μm are cut from the vertices of the ETR. For a deformed 5 μm ETR with round vertices and curve sides, the simulated mode quality factors are comparable to the measured results.

UR - http://www.scopus.com/inward/record.url?scp=4544318387&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4544318387&partnerID=8YFLogxK

U2 - 10.1049/ip-opt:20040671

DO - 10.1049/ip-opt:20040671

M3 - Article

AN - SCOPUS:4544318387

VL - 151

SP - 202

EP - 204

JO - IEE Proceedings: Optoelectronics

JF - IEE Proceedings: Optoelectronics

SN - 1350-2433

IS - 4

ER -