Analysis of plasma-grown GaAs oxide films

R. L. Kauffman*, L. C. Feldman, J. M. Poate, R. P H Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Thin oxide films of GaAs grown in a plasma have been analyzed using Rutherford backscattering and ion-induced x rays. Films whose thicknesses are greater than 1000 Å have a composition of O:Ga:As of 3:1.07:1. For the thinner films, the oxygen content is less indicating an incomplete oxidation.

Original languageEnglish (US)
Pages (from-to)319-321
Number of pages3
JournalApplied Physics Letters
Volume30
Issue number7
DOIs
StatePublished - Dec 1 1977

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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