Analysis of plasma-grown GaAs oxide films

R. L. Kauffman; L. C. Feldman; J. M. Poate; R. P H Chang

doi:10.1063/1.89407

Analysis of plasma-grown GaAs oxide films

R. L. Kauffman^*, L. C. Feldman, J. M. Poate, R. P H Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Thin oxide films of GaAs grown in a plasma have been analyzed using Rutherford backscattering and ion-induced x rays. Films whose thicknesses are greater than 1000 Å have a composition of O:Ga:As of 3:1.07:1. For the thinner films, the oxygen content is less indicating an incomplete oxidation.

Original language	English (US)
Pages (from-to)	319-321
Number of pages	3
Journal	Applied Physics Letters
Volume	30
Issue number	7
DOIs	https://doi.org/10.1063/1.89407
State	Published - 1977

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{64714c8eb378489d863b74c31b0013d0,

title = "Analysis of plasma-grown GaAs oxide films",

abstract = "Thin oxide films of GaAs grown in a plasma have been analyzed using Rutherford backscattering and ion-induced x rays. Films whose thicknesses are greater than 1000 {\AA} have a composition of O:Ga:As of 3:1.07:1. For the thinner films, the oxygen content is less indicating an incomplete oxidation.",

author = "Kauffman, {R. L.} and Feldman, {L. C.} and Poate, {J. M.} and Chang, {R. P H}",

year = "1977",

doi = "10.1063/1.89407",

language = "English (US)",

volume = "30",

pages = "319--321",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Analysis of plasma-grown GaAs oxide films

AU - Kauffman, R. L.

AU - Feldman, L. C.

AU - Poate, J. M.

AU - Chang, R. P H

PY - 1977

Y1 - 1977

N2 - Thin oxide films of GaAs grown in a plasma have been analyzed using Rutherford backscattering and ion-induced x rays. Films whose thicknesses are greater than 1000 Å have a composition of O:Ga:As of 3:1.07:1. For the thinner films, the oxygen content is less indicating an incomplete oxidation.

AB - Thin oxide films of GaAs grown in a plasma have been analyzed using Rutherford backscattering and ion-induced x rays. Films whose thicknesses are greater than 1000 Å have a composition of O:Ga:As of 3:1.07:1. For the thinner films, the oxygen content is less indicating an incomplete oxidation.

UR - http://www.scopus.com/inward/record.url?scp=36749121653&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36749121653&partnerID=8YFLogxK

U2 - 10.1063/1.89407

DO - 10.1063/1.89407

M3 - Article

AN - SCOPUS:36749121653

SN - 0003-6951

VL - 30

SP - 319

EP - 321

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Analysis of plasma-grown GaAs oxide films

Abstract

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