Analysis of spectral response in P-type GaAs/GaInP QWIPs

J. Hoff, C. Jelen, S. Slivken, E. Bigan, M. Razeghi, G. J. Brown

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Acceptor-doped GaAs/GaInP quantum well infrared photodetectors (QWIPs) have been grown and tested. The spectral response occurs at shorter wavelength than originally expected. Detailed experimental analysis has determined that the valence band well is quite deep. This has been confirmed by theoretical analysis using an 8 band envelope function analysis (EFA). The spin splitoff is small in the barrier material compared with the depth of the valence band well. The combined effect of a deep well and a small splitoff results in the observed spectral shape. The influence of the splitoff band on photoresponse is insignificant for GaAs/AlxGa1-xAs systems with x ≈ 0.03.

Original languageEnglish (US)
Pages (from-to)249-257
Number of pages9
JournalSuperlattices and Microstructures
Volume18
Issue number4
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Analysis of spectral response in P-type GaAs/GaInP QWIPs'. Together they form a unique fingerprint.

Cite this