Acceptor-doped GaAs/GaInP quantum well infrared photodetectors (QWIPs) have been grown and tested. The spectral response occurs at shorter wavelength than originally expected. Detailed experimental analysis has determined that the valence band well is quite deep. This has been confirmed by theoretical analysis using an 8 band envelope function analysis (EFA). The spin splitoff is small in the barrier material compared with the depth of the valence band well. The combined effect of a deep well and a small splitoff results in the observed spectral shape. The influence of the splitoff band on photoresponse is insignificant for GaAs/AlxGa1-xAs systems with x ≈ 0.03.
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering