Analysis of spectral response in P-type GaAs/GaInP QWIPs

J. Hoff; C. Jelen; S. Slivken; E. Bigan; M. Razeghi; G. J. Brown

doi:10.1006/spmi.1995.1109

Analysis of spectral response in P-type GaAs/GaInP QWIPs

J. Hoff, C. Jelen, S. Slivken, E. Bigan, M. Razeghi, G. J. Brown

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Acceptor-doped GaAs/GaInP quantum well infrared photodetectors (QWIPs) have been grown and tested. The spectral response occurs at shorter wavelength than originally expected. Detailed experimental analysis has determined that the valence band well is quite deep. This has been confirmed by theoretical analysis using an 8 band envelope function analysis (EFA). The spin splitoff is small in the barrier material compared with the depth of the valence band well. The combined effect of a deep well and a small splitoff results in the observed spectral shape. The influence of the splitoff band on photoresponse is insignificant for GaAs/Al_xGa_1-xAs systems with x ≈ 0.03.

Original language	English (US)
Pages (from-to)	249-257
Number of pages	9
Journal	Superlattices and Microstructures
Volume	18
Issue number	4
DOIs	https://doi.org/10.1006/spmi.1995.1109
State	Published - 1995

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1006/spmi.1995.1109

Cite this

@article{d64dc34a241d478db7b6a023c0ee9ccf,

title = "Analysis of spectral response in P-type GaAs/GaInP QWIPs",

abstract = "Acceptor-doped GaAs/GaInP quantum well infrared photodetectors (QWIPs) have been grown and tested. The spectral response occurs at shorter wavelength than originally expected. Detailed experimental analysis has determined that the valence band well is quite deep. This has been confirmed by theoretical analysis using an 8 band envelope function analysis (EFA). The spin splitoff is small in the barrier material compared with the depth of the valence band well. The combined effect of a deep well and a small splitoff results in the observed spectral shape. The influence of the splitoff band on photoresponse is insignificant for GaAs/AlxGa1-xAs systems with x ≈ 0.03.",

author = "J. Hoff and C. Jelen and S. Slivken and E. Bigan and M. Razeghi and Brown, {G. J.}",

year = "1995",

doi = "10.1006/spmi.1995.1109",

language = "English (US)",

volume = "18",

pages = "249--257",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4",

}

TY - JOUR

T1 - Analysis of spectral response in P-type GaAs/GaInP QWIPs

AU - Hoff, J.

AU - Jelen, C.

AU - Slivken, S.

AU - Bigan, E.

AU - Razeghi, M.

AU - Brown, G. J.

PY - 1995

Y1 - 1995

N2 - Acceptor-doped GaAs/GaInP quantum well infrared photodetectors (QWIPs) have been grown and tested. The spectral response occurs at shorter wavelength than originally expected. Detailed experimental analysis has determined that the valence band well is quite deep. This has been confirmed by theoretical analysis using an 8 band envelope function analysis (EFA). The spin splitoff is small in the barrier material compared with the depth of the valence band well. The combined effect of a deep well and a small splitoff results in the observed spectral shape. The influence of the splitoff band on photoresponse is insignificant for GaAs/AlxGa1-xAs systems with x ≈ 0.03.

AB - Acceptor-doped GaAs/GaInP quantum well infrared photodetectors (QWIPs) have been grown and tested. The spectral response occurs at shorter wavelength than originally expected. Detailed experimental analysis has determined that the valence band well is quite deep. This has been confirmed by theoretical analysis using an 8 band envelope function analysis (EFA). The spin splitoff is small in the barrier material compared with the depth of the valence band well. The combined effect of a deep well and a small splitoff results in the observed spectral shape. The influence of the splitoff band on photoresponse is insignificant for GaAs/AlxGa1-xAs systems with x ≈ 0.03.

UR - http://www.scopus.com/inward/record.url?scp=0029545332&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029545332&partnerID=8YFLogxK

U2 - 10.1006/spmi.1995.1109

DO - 10.1006/spmi.1995.1109

M3 - Article

AN - SCOPUS:0029545332

SN - 0749-6036

VL - 18

SP - 249

EP - 257

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Analysis of spectral response in P-type GaAs/GaInP QWIPs

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this