Abstract
This paper describes comprehensive analytical and simulation models for the design and optimization of the electron-injection based detectors. The electron-injection detectors evaluated here operate in the short-wave infrared range and utilize a type-II band alignment in InP/GaAsSb/InGaAs material system. The unique geometry of detectors along with an inherent negative-feedback mechanism in the device allows for achieving high internal avalanche-free amplifications without any excess noise. Physics-based closed-form analytical models are derived for the detector rise time and dark current. Our optical gain model takes into account the drop in the optical gain at high optical power levels. Furthermore, numerical simulation studies of the electrical characteristics of the device show good agreement with our analytical models as well experimental data. Performance comparison between devices with different injector sizes shows that enhancement in the gain and speed is anticipated by reducing the injector size. Sensitivity analysis for the key detector parameters shows the relative importance of each parameter. The results of this study may provide useful information and guidelines for development of future electron-injection based detectors as well as other heterojunction photodetectors.
| Original language | English (US) |
|---|---|
| Article number | 121102 |
| Journal | Applied Physics Letters |
| Volume | 108 |
| Issue number | 12 |
| DOIs | |
| State | Published - Mar 21 2016 |
Funding
V.F. and H.M. would like to acknowledge the partial support from NSF Award No. ECCS-1310620, as well as the computational resources and staff contributions provided for the Quest high performance computing facility at Northwestern University, which is jointly supported by the Office of the Provost, the Office for Research, and Northwestern University Information Technology. V.F. would also like to acknowledge the Ryan Fellowship support from Northwestern University. Y.M. and M.F. would like to acknowledge partially support by Nanoelectronic Center of Excellence at department of electrical and computer engineering at University of Tehran.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)