Angle-resolved photoemission study of the high-performance low-temperature thermoelectric material CSBi4Te6

V. A. Greanya; W. C. Tonjes; Rong Liu; C. G. Olson; D. Y. Chung; M. G. Kanatzidis

Angle-resolved photoemission study of the high-performance low-temperature thermoelectric material CSBi₄Te₆

V. A. Greanya, W. C. Tonjes, Rong Liu, C. G. Olson, D. Y. Chung, M. G. Kanatzidis

Chemistry

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We report a study of the valence-band electronic structure of the newly discovered thermoelectric material, CsBi₄Te₆, using angle-resolved photoelectron spectroscopy. This material exhibits quasi-one-dimensional behavior, which is related to its unique crystal structure. The highly anisotropic band dispersions might explain the large value of the figure of merit, ZT, observed in the hole-doped systems. Our experimental results are compared with a recent theoretical band-structure calculation.

Original language	English (US)
Article number	205123
Pages (from-to)	2051231-2051236
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	20
State	Published - May 15 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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abstract = "We report a study of the valence-band electronic structure of the newly discovered thermoelectric material, CsBi4Te6, using angle-resolved photoelectron spectroscopy. This material exhibits quasi-one-dimensional behavior, which is related to its unique crystal structure. The highly anisotropic band dispersions might explain the large value of the figure of merit, ZT, observed in the hole-doped systems. Our experimental results are compared with a recent theoretical band-structure calculation.",

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AU - Greanya, V. A.

AU - Tonjes, W. C.

AU - Liu, Rong

AU - Olson, C. G.

AU - Chung, D. Y.

AU - Kanatzidis, M. G.

PY - 2002/5/15

Y1 - 2002/5/15

N2 - We report a study of the valence-band electronic structure of the newly discovered thermoelectric material, CsBi4Te6, using angle-resolved photoelectron spectroscopy. This material exhibits quasi-one-dimensional behavior, which is related to its unique crystal structure. The highly anisotropic band dispersions might explain the large value of the figure of merit, ZT, observed in the hole-doped systems. Our experimental results are compared with a recent theoretical band-structure calculation.

AB - We report a study of the valence-band electronic structure of the newly discovered thermoelectric material, CsBi4Te6, using angle-resolved photoelectron spectroscopy. This material exhibits quasi-one-dimensional behavior, which is related to its unique crystal structure. The highly anisotropic band dispersions might explain the large value of the figure of merit, ZT, observed in the hole-doped systems. Our experimental results are compared with a recent theoretical band-structure calculation.

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ER -

Angle-resolved photoemission study of the high-performance low-temperature thermoelectric material CSBi₄Te₆

Abstract

ASJC Scopus subject areas

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