Anisotropic Seebeck and magneto-Seebeck coefficients of Bi and Bi0.92Sb0.08 alloy thin films

Sunglae Cho; Yunki Kim; Antonio DiVenere; George K.L. Wong; John B. Ketterson; Jerry R. Meyer

doi:10.1063/1.373740

Anisotropic Seebeck and magneto-Seebeck coefficients of Bi and Bi_0.92Sb_0.08 alloy thin films

Sunglae Cho^*, Yunki Kim, Antonio DiVenere, George K.L. Wong, John B. Ketterson, Jerry R. Meyer

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have grown Bi and BiSb alloy thin films on (211)CdTe substrates by molecular beam epitaxy. Growth proceeds with the Bi or BiSb (00.1) axis oriented along the CdTe[111] direction, which is tilted by 19^o with respect to the substrate normal. Measurements of the Seebeck coefficient reveal a strong dependence on angle within the plane, due to the anisotropic electronic structure. The coefficient measured along the [1̄11] axis, which includes a trigonal contribution from the Seebeck tensor, is considerably higher than the value along the [011̄] axis. The magneto-Seebeck coefficient was also studied, for magnetic fields of 0-0.7 T. We observe a strong dependence on both crystal-axis and magnetic field direction, the so-called "umkehr" effect.

Original language	English (US)
Pages (from-to)	808-812
Number of pages	5
Journal	Journal of Applied Physics
Volume	88
Issue number	2
DOIs	https://doi.org/10.1063/1.373740
State	Published - Jul 15 2000

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "We have grown Bi and BiSb alloy thin films on (211)CdTe substrates by molecular beam epitaxy. Growth proceeds with the Bi or BiSb (00.1) axis oriented along the CdTe[111] direction, which is tilted by 19o with respect to the substrate normal. Measurements of the Seebeck coefficient reveal a strong dependence on angle within the plane, due to the anisotropic electronic structure. The coefficient measured along the [{\=1}11] axis, which includes a trigonal contribution from the Seebeck tensor, is considerably higher than the value along the [01{\=1}] axis. The magneto-Seebeck coefficient was also studied, for magnetic fields of 0-0.7 T. We observe a strong dependence on both crystal-axis and magnetic field direction, the so-called {"}umkehr{"} effect.",

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T1 - Anisotropic Seebeck and magneto-Seebeck coefficients of Bi and Bi0.92Sb0.08 alloy thin films

AU - Cho, Sunglae

AU - Kim, Yunki

AU - DiVenere, Antonio

AU - Wong, George K.L.

AU - Ketterson, John B.

AU - Meyer, Jerry R.

PY - 2000/7/15

Y1 - 2000/7/15

N2 - We have grown Bi and BiSb alloy thin films on (211)CdTe substrates by molecular beam epitaxy. Growth proceeds with the Bi or BiSb (00.1) axis oriented along the CdTe[111] direction, which is tilted by 19o with respect to the substrate normal. Measurements of the Seebeck coefficient reveal a strong dependence on angle within the plane, due to the anisotropic electronic structure. The coefficient measured along the [1̄11] axis, which includes a trigonal contribution from the Seebeck tensor, is considerably higher than the value along the [011̄] axis. The magneto-Seebeck coefficient was also studied, for magnetic fields of 0-0.7 T. We observe a strong dependence on both crystal-axis and magnetic field direction, the so-called "umkehr" effect.

AB - We have grown Bi and BiSb alloy thin films on (211)CdTe substrates by molecular beam epitaxy. Growth proceeds with the Bi or BiSb (00.1) axis oriented along the CdTe[111] direction, which is tilted by 19o with respect to the substrate normal. Measurements of the Seebeck coefficient reveal a strong dependence on angle within the plane, due to the anisotropic electronic structure. The coefficient measured along the [1̄11] axis, which includes a trigonal contribution from the Seebeck tensor, is considerably higher than the value along the [011̄] axis. The magneto-Seebeck coefficient was also studied, for magnetic fields of 0-0.7 T. We observe a strong dependence on both crystal-axis and magnetic field direction, the so-called "umkehr" effect.

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