TY - JOUR
T1 - Anisotropic superconductivity and frozen electronic states at the (111) LaAlO3/SrTiO3 interface
AU - Davis, S.
AU - Huang, Z.
AU - Han, K.
AU - Ariando,
AU - Venkatesan, T.
AU - Chandrasekhar, V.
N1 - Funding Information:
Work at Northwestern was funded through a grant from the U.S. Department of Energy through Grant No. DE-FG02-06ER46346. Work at NUS was supported by the MOE Tier 1 (Grants No. R-144-000-364-112 and No. R-144-000-346-112) and Singapore National Research Foundation (NRF) under the Competitive Research Programs (CRP Awards No. NRF-CRP8-2011-06, No. NRF-CRP10-2012-02, and No. NRF-CRP15-2015-01).
Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/7/9
Y1 - 2018/7/9
N2 - We report measurements of the superconducting properties of the two-dimensional (2D) gas that forms at the interface between LaAlO3 (LAO) and SrTiO3 (STO) in the (111) crystal orientation, a system that permits in situ tuning of carrier density and disorder by means of a back-gate voltage Vg. Like the (001) oriented LAO/STO interface, superconductivity at the (111) LAO/STO interface can be tuned by Vg. The 2D superconductivity in these (111) LAO/STO samples shows an in-plane anisotropy, being different along different interface crystal directions, and "remembers" the disorder landscape at which they are cooled through the superconducting transition. The low energy scale and other characteristics of this memory effect distinguish it from charge-trapping effects previously observed in (001) interface samples.
AB - We report measurements of the superconducting properties of the two-dimensional (2D) gas that forms at the interface between LaAlO3 (LAO) and SrTiO3 (STO) in the (111) crystal orientation, a system that permits in situ tuning of carrier density and disorder by means of a back-gate voltage Vg. Like the (001) oriented LAO/STO interface, superconductivity at the (111) LAO/STO interface can be tuned by Vg. The 2D superconductivity in these (111) LAO/STO samples shows an in-plane anisotropy, being different along different interface crystal directions, and "remembers" the disorder landscape at which they are cooled through the superconducting transition. The low energy scale and other characteristics of this memory effect distinguish it from charge-trapping effects previously observed in (001) interface samples.
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U2 - 10.1103/PhysRevB.98.024504
DO - 10.1103/PhysRevB.98.024504
M3 - Article
AN - SCOPUS:85049990201
SN - 0163-1829
VL - 98
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 2
M1 - 024504
ER -