Anisotropy in thermoelectric properties of CsBi4Te6

Duck Young Chung, S. D. Mahanti, Wei Chen, Citrad Uher, Mercouri G. Kanatzidis*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations


CsBi4Te6 (ZT ∼ 0.8 at 225 K) shows highly anisotropic features in its crystal morphology and structure as expressed by the parallel infinite [Bi4Te6] rods which are linked via Bi-Bi bonds. Band calculations also point to a significant anisotropy in the carrier effective masses, and for this reason we examined the anisotropic thermoelectric properties of CsBi4Te6. The electrical conductivity, thermopower and thermal conductivity were measured along the three different crystallographic directions of the monoclinic structure of CsBi 4Te6. These measurements were performed on samples with different degrees of doping. The strong charge transport anisotropy of these samples was confirmed and also observed that the thermopower values along the c-axis direction (which is perpendicular to the layer of Cs atoms) was negative (-80 μV/K) while those along the needle direction (b-axis) and parallel to the [Bi4Te6] layers (a-axis) were p-type (50 100 μV/K at room temperature. Other anisotropic features in the crystal growth habit, electronic band structure, and electrical and thermal conductivities are also presented.

Original languageEnglish (US)
Pages (from-to)141-148
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2003
EventThermoelectric Materials 2003 - Research and Applications - Boston, MA., United States
Duration: Dec 1 2003Dec 3 2003

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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