Abstract
This communication demonstrates the combined use of two techniques for fabricating transistors that incorporate an organic semiconductor and that can operate at low voltages: anodization for thin (approximately 50 nm), high-capacitance gate dielectrics and microcontact printing on electroless silver for high-resolution (approximately 1 μm) source/drain electrodes. The techniques are attractive for use with organic active components because (i) they are carried out at or near room temperature in aqueous solutions, (ii) they are compatible with important organic semiconductors and flexible plastic substrates, and (iii) they are suitable for reel-to-reel processing. n- and p-Channel devices formed with the organic semiconductors dihexyl quinquethiophene and copper hexadecafluorophthalocyanine and anodized tantalum and silicon substrates illustrate the typical performance of transistors fabricated with these methods.
Original language | English (US) |
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Pages (from-to) | 6054-6060 |
Number of pages | 7 |
Journal | Langmuir |
Volume | 16 |
Issue number | 14 |
DOIs | |
State | Published - Jul 11 2000 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Surfaces and Interfaces
- Spectroscopy
- Electrochemistry