Double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices with a "dirty" middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1999|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)