Anomalous critical current in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices

I. P. Nevirkovets*, J. B. Ketterson, S. Lomatch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


Double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices with a "dirty" middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found.

Original languageEnglish (US)
Pages (from-to)1624-1626
Number of pages3
JournalApplied Physics Letters
Issue number11
StatePublished - 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Anomalous critical current in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices'. Together they form a unique fingerprint.

Cite this