Anomalous critical current in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices

I. P. Nevirkovets; J. B. Ketterson; S. Lomatch

doi:10.1063/1.123637

Anomalous critical current in double-barrier Nb/Al-AlO_x-Al-AlO_x-Nb devices

I. P. Nevirkovets^*, J. B. Ketterson, S. Lomatch

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Double-barrier Nb/Al-AlO_x-Al-AlO_x-Nb devices with a "dirty" middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found.

Original language	English (US)
Pages (from-to)	1624-1626
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	11
DOIs	https://doi.org/10.1063/1.123637
State	Published - 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.123637

Cite this

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title = "Anomalous critical current in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices",

abstract = "Double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices with a {"}dirty{"} middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found.",

author = "Nevirkovets, {I. P.} and Ketterson, {J. B.} and S. Lomatch",

year = "1999",

doi = "10.1063/1.123637",

language = "English (US)",

volume = "74",

pages = "1624--1626",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Anomalous critical current in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices

AU - Nevirkovets, I. P.

AU - Ketterson, J. B.

AU - Lomatch, S.

PY - 1999

Y1 - 1999

N2 - Double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices with a "dirty" middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found.

AB - Double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices with a "dirty" middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found.

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U2 - 10.1063/1.123637

DO - 10.1063/1.123637

M3 - Article

AN - SCOPUS:0000795535

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EP - 1626

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Anomalous critical current in double-barrier Nb/Al-AlO_x-Al-AlO_x-Nb devices

Abstract

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