Anomalous critical current in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices

I. P. Nevirkovets*, J. B. Ketterson, S. Lomatch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices with a "dirty" middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found.

Original languageEnglish (US)
Pages (from-to)1624-1626
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number11
DOIs
StatePublished - Dec 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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