TY - JOUR
T1 - Anomalously Large Seebeck Coefficient of CuFeS2 Derives from Large Asymmetry in the Energy Dependence of Carrier Relaxation Time
AU - Xie, Hongyao
AU - Su, Xianli
AU - Bailey, Trevor P.
AU - Zhang, Cheng
AU - Liu, Wei
AU - Uher, Ctirad
AU - Tang, Xinfeng
AU - Kanatzidis, Mercouri G.
PY - 2020/1/1
Y1 - 2020/1/1
N2 - The Seebeck effect in a material originates from the distribution of asymmetry in the electron transport under a temperature gradient, which has contributions from the energy-dependent electronic density-of-states and carrier mobility. However, because the energy dependence of common electron scattering mechanisms is weak, the mobility-driven Seebeck coefficient has long been ignored in most thermoelectric materials, and the energy asymmetry of the density-of-states has been considered the dominant contribution. In this work, we describe a hopping transport behavior observed in CuFeS2, and a large carrier Hall mobility gradient of dμH/dT that creates an unusually large energy-dependent mobility contribution to the Seebeck coefficient. This work offers several ideas regarding the mobility-driven Seebeck effect and its potential utilization in the design of thermoelectric materials.
AB - The Seebeck effect in a material originates from the distribution of asymmetry in the electron transport under a temperature gradient, which has contributions from the energy-dependent electronic density-of-states and carrier mobility. However, because the energy dependence of common electron scattering mechanisms is weak, the mobility-driven Seebeck coefficient has long been ignored in most thermoelectric materials, and the energy asymmetry of the density-of-states has been considered the dominant contribution. In this work, we describe a hopping transport behavior observed in CuFeS2, and a large carrier Hall mobility gradient of dμH/dT that creates an unusually large energy-dependent mobility contribution to the Seebeck coefficient. This work offers several ideas regarding the mobility-driven Seebeck effect and its potential utilization in the design of thermoelectric materials.
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U2 - 10.1021/acs.chemmater.0c00388
DO - 10.1021/acs.chemmater.0c00388
M3 - Article
AN - SCOPUS:85081652376
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
ER -