Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

Manijeh Razeghi, Arash Dehzangi, Donghai Wu, Ryan P McClintock, Yiyun Zhang, Quentin Durlin, Jiakai Li, Fanfei Meng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Third generation of infrared imagers demand performances for higher detectivity, higher operating temperature, higher resolution, and multi-color detection all accomplished with better yield and lower manufacturing costs. Antimonide-based gap-engineered Type-II superlattices (T2SLs) material system is considered as a potential alternative for Mercury- Cadmium-Telluride (HgCdTe) technology in all different infrared detection regimes from short to very long wavelengths for the third generation of infrared imagers. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. We will present the most recent research results on Antimonide-based gap-engineered Type-II superlattices, such as high-performance dual-band SWIR/MWIR photo-detectors and focal plane arrays for different infrared regimes, toward the third generation of infrared imaging systems at the Center for Quantum Devices. Comparing metal-organic chemical vapor deposition (MOCVD), vs molecular beam epitaxy (MBE).

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XLV
EditorsBjorn F. Andresen, Gabor F. Fulop, Charles M. Hanson
PublisherSPIE
ISBN (Electronic)9781510626690
DOIs
StatePublished - Jan 1 2019
EventInfrared Technology and Applications XLV 2019 - Baltimore, United States
Duration: Apr 14 2019Apr 18 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11002
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceInfrared Technology and Applications XLV 2019
CountryUnited States
CityBaltimore
Period4/14/194/18/19

Keywords

  • Antimony
  • Extended Short Wave Infrared
  • Focal plan arrays
  • Metal-Organic Chemical Vapor Deposition
  • Molecular Beam Epitaxy
  • Photodetectors
  • Quantum Efficiency
  • Type-II Superlattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Razeghi, M., Dehzangi, A., Wu, D., McClintock, R. P., Zhang, Y., Durlin, Q., Li, J., & Meng, F. (2019). Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers. In B. F. Andresen, G. F. Fulop, & C. M. Hanson (Eds.), Infrared Technology and Applications XLV [110020G] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11002). SPIE. https://doi.org/10.1117/12.2521173