Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

Manijeh Razeghi; Arash Dehzangi; Donghai Wu; Ryan McClintock; Yiyun Zhang; Quentin Durlin; Jiakai Li; Fanfei Meng

doi:10.1117/12.2521173

Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

Manijeh Razeghi, Arash Dehzangi, Donghai Wu, Ryan McClintock, Yiyun Zhang, Quentin Durlin, Jiakai Li, Fanfei Meng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Scopus citations

Abstract

Third generation of infrared imagers demand performances for higher detectivity, higher operating temperature, higher resolution, and multi-color detection all accomplished with better yield and lower manufacturing costs. Antimonide-based gap-engineered Type-II superlattices (T2SLs) material system is considered as a potential alternative for Mercury- Cadmium-Telluride (HgCdTe) technology in all different infrared detection regimes from short to very long wavelengths for the third generation of infrared imagers. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. We will present the most recent research results on Antimonide-based gap-engineered Type-II superlattices, such as high-performance dual-band SWIR/MWIR photo-detectors and focal plane arrays for different infrared regimes, toward the third generation of infrared imaging systems at the Center for Quantum Devices. Comparing metal-organic chemical vapor deposition (MOCVD), vs molecular beam epitaxy (MBE).

Original language	English (US)
Title of host publication	Infrared Technology and Applications XLV
Editors	Bjorn F. Andresen, Gabor F. Fulop, Charles M. Hanson
Publisher	SPIE
ISBN (Electronic)	9781510626690
DOIs	https://doi.org/10.1117/12.2521173
State	Published - 2019
Event	Infrared Technology and Applications XLV 2019 - Baltimore, United States Duration: Apr 14 2019 → Apr 18 2019

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11002
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Infrared Technology and Applications XLV 2019
Country/Territory	United States
City	Baltimore
Period	4/14/19 → 4/18/19

Keywords

Antimony
Extended Short Wave Infrared
Focal plan arrays
Metal-Organic Chemical Vapor Deposition
Molecular Beam Epitaxy
Photodetectors
Quantum Efficiency
Type-II Superlattices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2521173

Cite this

Razeghi, M., Dehzangi, A., Wu, D., McClintock, R., Zhang, Y., Durlin, Q., Li, J., & Meng, F. (2019). Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers. In B. F. Andresen, G. F. Fulop, & C. M. Hanson (Eds.), Infrared Technology and Applications XLV Article 110020G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11002). SPIE. https://doi.org/10.1117/12.2521173

Razeghi, Manijeh ; Dehzangi, Arash ; Wu, Donghai et al. / Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers. Infrared Technology and Applications XLV. editor / Bjorn F. Andresen ; Gabor F. Fulop ; Charles M. Hanson. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{1213d030afe946efa07eda30c3e3089e,

title = "Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers",

abstract = "Third generation of infrared imagers demand performances for higher detectivity, higher operating temperature, higher resolution, and multi-color detection all accomplished with better yield and lower manufacturing costs. Antimonide-based gap-engineered Type-II superlattices (T2SLs) material system is considered as a potential alternative for Mercury- Cadmium-Telluride (HgCdTe) technology in all different infrared detection regimes from short to very long wavelengths for the third generation of infrared imagers. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. We will present the most recent research results on Antimonide-based gap-engineered Type-II superlattices, such as high-performance dual-band SWIR/MWIR photo-detectors and focal plane arrays for different infrared regimes, toward the third generation of infrared imaging systems at the Center for Quantum Devices. Comparing metal-organic chemical vapor deposition (MOCVD), vs molecular beam epitaxy (MBE).",

keywords = "Antimony, Extended Short Wave Infrared, Focal plan arrays, Metal-Organic Chemical Vapor Deposition, Molecular Beam Epitaxy, Photodetectors, Quantum Efficiency, Type-II Superlattices",

author = "Manijeh Razeghi and Arash Dehzangi and Donghai Wu and Ryan McClintock and Yiyun Zhang and Quentin Durlin and Jiakai Li and Fanfei Meng",

note = "Publisher Copyright: Copyright {\textcopyright} 2019 SPIE.; Infrared Technology and Applications XLV 2019 ; Conference date: 14-04-2019 Through 18-04-2019",

year = "2019",

doi = "10.1117/12.2521173",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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Razeghi, M, Dehzangi, A, Wu, D, McClintock, R, Zhang, Y, Durlin, Q, Li, J & Meng, F 2019, Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers. in BF Andresen, GF Fulop & CM Hanson (eds), Infrared Technology and Applications XLV., 110020G, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11002, SPIE, Infrared Technology and Applications XLV 2019, Baltimore, United States, 4/14/19. https://doi.org/10.1117/12.2521173

Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers. / Razeghi, Manijeh; Dehzangi, Arash; Wu, Donghai et al.
Infrared Technology and Applications XLV. ed. / Bjorn F. Andresen; Gabor F. Fulop; Charles M. Hanson. SPIE, 2019. 110020G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Razeghi, Manijeh

AU - Dehzangi, Arash

AU - Wu, Donghai

AU - McClintock, Ryan

AU - Zhang, Yiyun

AU - Durlin, Quentin

AU - Li, Jiakai

AU - Meng, Fanfei

PY - 2019

Y1 - 2019

N2 - Third generation of infrared imagers demand performances for higher detectivity, higher operating temperature, higher resolution, and multi-color detection all accomplished with better yield and lower manufacturing costs. Antimonide-based gap-engineered Type-II superlattices (T2SLs) material system is considered as a potential alternative for Mercury- Cadmium-Telluride (HgCdTe) technology in all different infrared detection regimes from short to very long wavelengths for the third generation of infrared imagers. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. We will present the most recent research results on Antimonide-based gap-engineered Type-II superlattices, such as high-performance dual-band SWIR/MWIR photo-detectors and focal plane arrays for different infrared regimes, toward the third generation of infrared imaging systems at the Center for Quantum Devices. Comparing metal-organic chemical vapor deposition (MOCVD), vs molecular beam epitaxy (MBE).

AB - Third generation of infrared imagers demand performances for higher detectivity, higher operating temperature, higher resolution, and multi-color detection all accomplished with better yield and lower manufacturing costs. Antimonide-based gap-engineered Type-II superlattices (T2SLs) material system is considered as a potential alternative for Mercury- Cadmium-Telluride (HgCdTe) technology in all different infrared detection regimes from short to very long wavelengths for the third generation of infrared imagers. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. We will present the most recent research results on Antimonide-based gap-engineered Type-II superlattices, such as high-performance dual-band SWIR/MWIR photo-detectors and focal plane arrays for different infrared regimes, toward the third generation of infrared imaging systems at the Center for Quantum Devices. Comparing metal-organic chemical vapor deposition (MOCVD), vs molecular beam epitaxy (MBE).

KW - Antimony

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KW - Focal plan arrays

KW - Metal-Organic Chemical Vapor Deposition

KW - Molecular Beam Epitaxy

KW - Photodetectors

KW - Quantum Efficiency

KW - Type-II Superlattices

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M3 - Conference contribution

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

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A2 - Andresen, Bjorn F.

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ER -

Razeghi M, Dehzangi A, Wu D, McClintock R, Zhang Y, Durlin Q et al. Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers. In Andresen BF, Fulop GF, Hanson CM, editors, Infrared Technology and Applications XLV. SPIE. 2019. 110020G. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2521173

Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

Abstract

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Keywords

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