Antisite defects of Bi 2 Te 3 thin films

Sunglae Cho, Yunki Kim, Antonio DiVenere, George K. Wong, John B Ketterson, Jerry R. Meyer

Research output: Contribution to journalArticlepeer-review

146 Scopus citations


Bi 2 Te 3 thin films were grown on CdTe(111)B substrates using molecular beam epitaxy. On CdTe(111), Bi 2 Te 3 grows along the (00.l) axis of the hexagonal cell in a layer-by-layer growth mode. The most stoichiometric sample has high crystallinity, high thermopower and high electron mobility. Both the crystallinity and the transport properties are sensitive to deviations from stoichiometry. The c-axis lattice constant, thermopower, and electron mobility decrease with excess Te, and the crystallinity clearly degrades.

Original languageEnglish (US)
Pages (from-to)1401-1403
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - Sep 6 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Antisite defects of Bi 2 Te 3 thin films'. Together they form a unique fingerprint.

Cite this