Bi 2 Te 3 thin films were grown on CdTe(111)B substrates using molecular beam epitaxy. On CdTe(111), Bi 2 Te 3 grows along the (00.l) axis of the hexagonal cell in a layer-by-layer growth mode. The most stoichiometric sample has high crystallinity, high thermopower and high electron mobility. Both the crystallinity and the transport properties are sensitive to deviations from stoichiometry. The c-axis lattice constant, thermopower, and electron mobility decrease with excess Te, and the crystallinity clearly degrades.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Sep 6 1999|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)