Antisite defects of Bi
                        2
                        Te
                        3
                         thin films

Sunglae Cho; Yunki Kim; Antonio DiVenere; George K. Wong; John B Ketterson; Jerry R. Meyer

doi:10.1063/1.124707

Antisite defects of Bi ₂ Te ₃ thin films

Sunglae Cho, Yunki Kim, Antonio DiVenere, George K. Wong, John B Ketterson, Jerry R. Meyer

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

144 Scopus citations

Abstract

Bi ₂ Te ₃ thin films were grown on CdTe(111)B substrates using molecular beam epitaxy. On CdTe(111), Bi ₂ Te ₃ grows along the (00.l) axis of the hexagonal cell in a layer-by-layer growth mode. The most stoichiometric sample has high crystallinity, high thermopower and high electron mobility. Both the crystallinity and the transport properties are sensitive to deviations from stoichiometry. The c-axis lattice constant, thermopower, and electron mobility decrease with excess Te, and the crystallinity clearly degrades.

Original language	English (US)
Pages (from-to)	1401-1403
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	10
DOIs	https://doi.org/10.1063/1.124707
State	Published - Sep 6 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.124707

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title = " Antisite defects of Bi 2 Te 3 thin films ",

abstract = " Bi 2 Te 3 thin films were grown on CdTe(111)B substrates using molecular beam epitaxy. On CdTe(111), Bi 2 Te 3 grows along the (00.l) axis of the hexagonal cell in a layer-by-layer growth mode. The most stoichiometric sample has high crystallinity, high thermopower and high electron mobility. Both the crystallinity and the transport properties are sensitive to deviations from stoichiometry. The c-axis lattice constant, thermopower, and electron mobility decrease with excess Te, and the crystallinity clearly degrades. ",

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Antisite defects of Bi ₂ Te ₃ thin films . / Cho, Sunglae; Kim, Yunki; DiVenere, Antonio et al.

In: Applied Physics Letters, Vol. 75, No. 10, 06.09.1999, p. 1401-1403.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Antisite defects of Bi 2 Te 3 thin films

AU - Cho, Sunglae

AU - Kim, Yunki

AU - DiVenere, Antonio

AU - Wong, George K.

AU - Ketterson, John B

AU - Meyer, Jerry R.

PY - 1999/9/6

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AB - Bi 2 Te 3 thin films were grown on CdTe(111)B substrates using molecular beam epitaxy. On CdTe(111), Bi 2 Te 3 grows along the (00.l) axis of the hexagonal cell in a layer-by-layer growth mode. The most stoichiometric sample has high crystallinity, high thermopower and high electron mobility. Both the crystallinity and the transport properties are sensitive to deviations from stoichiometry. The c-axis lattice constant, thermopower, and electron mobility decrease with excess Te, and the crystallinity clearly degrades.

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Antisite defects of Bi ₂ Te ₃ thin films

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