Applicability of the high field model: An analytical study via asymptotic parameters defining domain decomposition

Carlo Cercignani, Irene M. Gamba, Joseph W. Jerome*, Chi Wang Shu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper, we present a mesoscopic-macroscopic model of self-consistent charge transport. It is based upon an asymptotic expansion of solutions of the Boltzmann Transport Equation (BTE). We identify three dimensionless parameters from the BTE. These parameters are, respectively, the quotient of reference scales for drift and thermal velocities, the scaled mean free path, and the scaled Debye length. Such parameters induce domain dependent macroscopic approximations. Particular focus is placed upon the so-called high field model, defined by the regime where drift velocity dominates thermal velocity. This model incorporates kinetic transition layers, linking mesoscopic to macroscopic states. Reference scalings are defined by the background doping levels and distinct, experimentally measured mobility expressions, as well as locally determined ranges for the electric fields. The mobilities reflect a coarse substitute for reference scales of scattering mechanisms. See [9] for elaboration. The high field approximation is a formally derived modification of the augmented drift-diffusion model originally introduced by Thornber some fifteen years ago [25]. We are able to compare our approach with the earlier kinetic approach of Baranger and Wilkins [5] and the macroscopic approach of Kan, Ravaioli and Kerkhoven [20].

Original languageEnglish (US)
Pages (from-to)135-141
Number of pages7
JournalVLSI Design
Volume8
Issue number1-4
DOIs
StatePublished - 1998

Keywords

  • Asymptotic parameters
  • Augmented drift-diffusion
  • Domain decomposition
  • High field model
  • Mesoscopic-macroscopic model

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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