Application of TEM to the development of information storage materials

A. K. Petford-Long*, A. Kohn, T. Bromwich, V. Jackson, F. Castaño, L. J. Singh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

One of the most spectacular examples of nanomagnetic systems is that of devices based on the giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) phenomena. The device response depends critically on parameters such as layer thickness and chemical abruptness of the interfaces between layers, which are nanometre-scale in thickness. We have used high resolution electron microscopy (HREM) and TEM chemical mapping to understand the microstructural origins of the magnetic and transport properties of magnetoresistive structures. We have also used Lorentz TEM and in situ magnetising experiments to analyse their magnetic structure and magnetisation reversal processes.

Original languageEnglish (US)
Pages (from-to)10-15
Number of pages6
JournalThin Solid Films
Volume505
Issue number1-2
DOIs
StatePublished - May 18 2006

Keywords

  • HREM
  • Lorentz TEM
  • Magnetic thin films
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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