Application of TEM to the development of information storage materials

A. K. Petford-Long; A. Kohn; T. Bromwich; V. Jackson; F. Castaño; L. J. Singh

doi:10.1016/j.tsf.2005.10.010

Application of TEM to the development of information storage materials

A. K. Petford-Long^*, A. Kohn, T. Bromwich, V. Jackson, F. Castaño, L. J. Singh

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

One of the most spectacular examples of nanomagnetic systems is that of devices based on the giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) phenomena. The device response depends critically on parameters such as layer thickness and chemical abruptness of the interfaces between layers, which are nanometre-scale in thickness. We have used high resolution electron microscopy (HREM) and TEM chemical mapping to understand the microstructural origins of the magnetic and transport properties of magnetoresistive structures. We have also used Lorentz TEM and in situ magnetising experiments to analyse their magnetic structure and magnetisation reversal processes.

Original language	English (US)
Pages (from-to)	10-15
Number of pages	6
Journal	Thin Solid Films
Volume	505
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.10.010
State	Published - May 18 2006

Funding

We are grateful to the following for provision of the samples from which these data were recorded: Fig. 1 Dr. B Karr, Seagate Technology; Fig. 5 Dr. T Anthony, Hewlett-Packard Labs. We are grateful to Prof. G D W Smith for provision of laboratory space and to the following for funding: EPSRC (TB), HP Labs (AK).

Keywords

HREM
Lorentz TEM
Magnetic thin films
Tunnel magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Application of TEM to the development of information storage materials",

abstract = "One of the most spectacular examples of nanomagnetic systems is that of devices based on the giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) phenomena. The device response depends critically on parameters such as layer thickness and chemical abruptness of the interfaces between layers, which are nanometre-scale in thickness. We have used high resolution electron microscopy (HREM) and TEM chemical mapping to understand the microstructural origins of the magnetic and transport properties of magnetoresistive structures. We have also used Lorentz TEM and in situ magnetising experiments to analyse their magnetic structure and magnetisation reversal processes.",

keywords = "HREM, Lorentz TEM, Magnetic thin films, Tunnel magnetoresistance",

author = "Petford-Long, {A. K.} and A. Kohn and T. Bromwich and V. Jackson and F. Casta{\~n}o and Singh, {L. J.}",

note = "Funding Information: We are grateful to the following for provision of the samples from which these data were recorded: Fig. 1 Dr. B Karr, Seagate Technology; Fig. 5 Dr. T Anthony, Hewlett-Packard Labs. We are grateful to Prof. G D W Smith for provision of laboratory space and to the following for funding: EPSRC (TB), HP Labs (AK).",

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AU - Petford-Long, A. K.

AU - Kohn, A.

AU - Bromwich, T.

AU - Jackson, V.

AU - Castaño, F.

AU - Singh, L. J.

N1 - Funding Information: We are grateful to the following for provision of the samples from which these data were recorded: Fig. 1 Dr. B Karr, Seagate Technology; Fig. 5 Dr. T Anthony, Hewlett-Packard Labs. We are grateful to Prof. G D W Smith for provision of laboratory space and to the following for funding: EPSRC (TB), HP Labs (AK).

PY - 2006/5/18

Y1 - 2006/5/18

N2 - One of the most spectacular examples of nanomagnetic systems is that of devices based on the giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) phenomena. The device response depends critically on parameters such as layer thickness and chemical abruptness of the interfaces between layers, which are nanometre-scale in thickness. We have used high resolution electron microscopy (HREM) and TEM chemical mapping to understand the microstructural origins of the magnetic and transport properties of magnetoresistive structures. We have also used Lorentz TEM and in situ magnetising experiments to analyse their magnetic structure and magnetisation reversal processes.

AB - One of the most spectacular examples of nanomagnetic systems is that of devices based on the giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) phenomena. The device response depends critically on parameters such as layer thickness and chemical abruptness of the interfaces between layers, which are nanometre-scale in thickness. We have used high resolution electron microscopy (HREM) and TEM chemical mapping to understand the microstructural origins of the magnetic and transport properties of magnetoresistive structures. We have also used Lorentz TEM and in situ magnetising experiments to analyse their magnetic structure and magnetisation reversal processes.

KW - HREM

KW - Lorentz TEM

KW - Magnetic thin films

KW - Tunnel magnetoresistance

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Application of TEM to the development of information storage materials

Abstract

Funding

Keywords

ASJC Scopus subject areas

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