Abstract
The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 235-237 |
| Number of pages | 3 |
| Journal | Microelectronic Engineering |
| Volume | 47 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jun 1999 |
| Event | Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA Duration: Dec 7 1998 → Dec 11 1998 |
Funding
The authors have benefited from discussions with Prof. Jeff Moore, Prof. Karl Hess, Dr. Janelle Gunther, Dr. Hyungsoo Choi, Dr. Jiutao Li, and Scott Thompson. M. C. Hersam thanks the National Science Foundation for a graduate research fellowship. This work is supported by the Office of Naval Research Multidisciplinary University Research Initiative.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering