Aqueous-phase oxidation of epitaxial graphene on the silicon face of SiC(0001)

Md Zakir Hossain; Maisarah B.A. Razak; Shinya Yoshimoto; Kozo Mukai; Takanori Koitaya; Jun Yoshinobu; Hayato Sone; Sumio Hosaka; Mark C. Hersam

doi:10.1021/jp4092738

Aqueous-phase oxidation of epitaxial graphene on the silicon face of SiC(0001)

Md Zakir Hossain^*, Maisarah B.A. Razak, Shinya Yoshimoto, Kozo Mukai, Takanori Koitaya, Jun Yoshinobu, Hayato Sone, Sumio Hosaka, Mark C. Hersam

^*Corresponding author for this work

Materials Science and Engineering

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Abstract

To explore the chemical and electronic states of oxidized epitaxial graphene (EG) grown on the Si face of SiC(0001), we employ the Hummers oxidizing agents (H₂SO₄ + NaNO₃ + KMnO₄) under different reaction conditions that oxidize the graphene layer. The resulting material is characterized with scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). A mild "drop-cast" procedure at 60 C is found to be equally effective at oxidizing EG as the conventional Hummers procedure. This aqueous-phase oxidation reaction appears to proceed in an autocatalytic manner as indicated by the concurrent observation of patches of oxidized and clean graphene areas in atomically resolved STM images on partially oxidized EG. STS further reveals substantial changes in electronic structure for oxidized EG including the opening of a local band gap of ∼0.4 eV. The oxidation is confined to the graphene layers as verified by XPS characterization of the underlying SiC substrate. In contrast to EG oxidized in ultrahigh vacuum that contains only epoxy groups and can be fully reverted back to pristine EG following annealing at 260 C, aqueous-phase oxidized EG possesses carbonyl and hydroxyl groups in addition to the dominant epoxy groups and thus remains partially oxidized even following annealing at 1000 C.

Original language	English (US)
Pages (from-to)	1014-1020
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	118
Issue number	2
DOIs	https://doi.org/10.1021/jp4092738
State	Published - Jan 16 2014

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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@article{e57e913c127d4955a01b4dbc1cc3cd16,

title = "Aqueous-phase oxidation of epitaxial graphene on the silicon face of SiC(0001)",

abstract = "To explore the chemical and electronic states of oxidized epitaxial graphene (EG) grown on the Si face of SiC(0001), we employ the Hummers oxidizing agents (H2SO4 + NaNO3 + KMnO4) under different reaction conditions that oxidize the graphene layer. The resulting material is characterized with scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). A mild {"}drop-cast{"} procedure at 60 C is found to be equally effective at oxidizing EG as the conventional Hummers procedure. This aqueous-phase oxidation reaction appears to proceed in an autocatalytic manner as indicated by the concurrent observation of patches of oxidized and clean graphene areas in atomically resolved STM images on partially oxidized EG. STS further reveals substantial changes in electronic structure for oxidized EG including the opening of a local band gap of ∼0.4 eV. The oxidation is confined to the graphene layers as verified by XPS characterization of the underlying SiC substrate. In contrast to EG oxidized in ultrahigh vacuum that contains only epoxy groups and can be fully reverted back to pristine EG following annealing at 260 C, aqueous-phase oxidized EG possesses carbonyl and hydroxyl groups in addition to the dominant epoxy groups and thus remains partially oxidized even following annealing at 1000 C.",

author = "Hossain, {Md Zakir} and Razak, {Maisarah B.A.} and Shinya Yoshimoto and Kozo Mukai and Takanori Koitaya and Jun Yoshinobu and Hayato Sone and Sumio Hosaka and Hersam, {Mark C.}",

year = "2014",

month = jan,

day = "16",

doi = "10.1021/jp4092738",

language = "English (US)",

volume = "118",

pages = "1014--1020",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "2",

}

TY - JOUR

T1 - Aqueous-phase oxidation of epitaxial graphene on the silicon face of SiC(0001)

AU - Hossain, Md Zakir

AU - Razak, Maisarah B.A.

AU - Yoshimoto, Shinya

AU - Mukai, Kozo

AU - Koitaya, Takanori

AU - Yoshinobu, Jun

AU - Sone, Hayato

AU - Hosaka, Sumio

AU - Hersam, Mark C.

PY - 2014/1/16

Y1 - 2014/1/16

N2 - To explore the chemical and electronic states of oxidized epitaxial graphene (EG) grown on the Si face of SiC(0001), we employ the Hummers oxidizing agents (H2SO4 + NaNO3 + KMnO4) under different reaction conditions that oxidize the graphene layer. The resulting material is characterized with scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). A mild "drop-cast" procedure at 60 C is found to be equally effective at oxidizing EG as the conventional Hummers procedure. This aqueous-phase oxidation reaction appears to proceed in an autocatalytic manner as indicated by the concurrent observation of patches of oxidized and clean graphene areas in atomically resolved STM images on partially oxidized EG. STS further reveals substantial changes in electronic structure for oxidized EG including the opening of a local band gap of ∼0.4 eV. The oxidation is confined to the graphene layers as verified by XPS characterization of the underlying SiC substrate. In contrast to EG oxidized in ultrahigh vacuum that contains only epoxy groups and can be fully reverted back to pristine EG following annealing at 260 C, aqueous-phase oxidized EG possesses carbonyl and hydroxyl groups in addition to the dominant epoxy groups and thus remains partially oxidized even following annealing at 1000 C.

AB - To explore the chemical and electronic states of oxidized epitaxial graphene (EG) grown on the Si face of SiC(0001), we employ the Hummers oxidizing agents (H2SO4 + NaNO3 + KMnO4) under different reaction conditions that oxidize the graphene layer. The resulting material is characterized with scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). A mild "drop-cast" procedure at 60 C is found to be equally effective at oxidizing EG as the conventional Hummers procedure. This aqueous-phase oxidation reaction appears to proceed in an autocatalytic manner as indicated by the concurrent observation of patches of oxidized and clean graphene areas in atomically resolved STM images on partially oxidized EG. STS further reveals substantial changes in electronic structure for oxidized EG including the opening of a local band gap of ∼0.4 eV. The oxidation is confined to the graphene layers as verified by XPS characterization of the underlying SiC substrate. In contrast to EG oxidized in ultrahigh vacuum that contains only epoxy groups and can be fully reverted back to pristine EG following annealing at 260 C, aqueous-phase oxidized EG possesses carbonyl and hydroxyl groups in addition to the dominant epoxy groups and thus remains partially oxidized even following annealing at 1000 C.

UR - http://www.scopus.com/inward/record.url?scp=84892738433&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892738433&partnerID=8YFLogxK

U2 - 10.1021/jp4092738

DO - 10.1021/jp4092738

M3 - Article

AN - SCOPUS:84892738433

SN - 1932-7447

VL - 118

SP - 1014

EP - 1020

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 2

ER -

Aqueous-phase oxidation of epitaxial graphene on the silicon face of SiC(0001)

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