INIS
oxidation
100%
graphene
100%
silicon carbides
100%
silicon
100%
epitaxy
100%
scanning tunneling microscopy
36%
layers
18%
x-ray photoelectron spectroscopy
18%
annealing
18%
epoxides
18%
images
9%
electronic structure
9%
substrates
9%
raman spectroscopy
9%
hydroxides
9%
ultrahigh vacuum
9%
carbonyls
9%
oxidizing agents
9%
Engineering
Aqueous Phase
100%
Epitaxial Graphene
100%
Layer Graphene
25%
Ray Photoelectron Spectroscopy
25%
Annealing
12%
Reaction Condition
12%
Energy Gap
12%
Substantial Change
12%
Electronic State
12%
Images
12%
Substrates
12%
Electronics
12%
Material Science
Graphene
100%
Oxidation Reaction
100%
Silicon
100%
Cast
9%
Characterization
9%
Annealing
9%
Material
9%
Electronic Structure
9%
Biochemistry, Genetics and Molecular Biology
Alpha Oxidation
100%
Scanning Tunneling Microscopy
100%
X-Ray Photoelectron Spectroscopy
50%
Contrast
25%
Vacuum
25%
Raman Spectroscopy
25%