Arsenic incorporation in InAsP/InP quantum wells

G. Dagnall; A. S. Brown; S. R. Stock

doi:10.1007/s11664-999-0246-0

Arsenic incorporation in InAsP/InP quantum wells

G. Dagnall^*, A. S. Brown, S. R. Stock

^*Corresponding author for this work

Cell & Developmental Biology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

InAsP/InP multiquantum well structures were grown by solid source molecular beam epitaxy using either As₂ or As₄ over a substrate temperature range of 420-535 °C. All quantum wells had similar arsenic compositions with a 2.2% standard deviation regardless of arsenic species or growth temperature. This temperature insensitivity of arsenic incorporation in InAsP is in sharp contrast to InGaAsP in which arsenic composition is very sensitive to both substrate temperature and gallium percentage in the compound. The insensitivity of arsenic incorporation in InAsP to substrate temperature may result from growth in a phosphorus rich condition with indium as the only available cation.

Original language	English (US)
Pages (from-to)	1108-1110
Number of pages	3
Journal	Journal of Electronic Materials
Volume	28
Issue number	10
DOIs	https://doi.org/10.1007/s11664-999-0246-0
State	Published - Oct 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-999-0246-0

Cite this

@article{c06a8e0efee3497aa2b6528803305ff5,

title = "Arsenic incorporation in InAsP/InP quantum wells",

abstract = "InAsP/InP multiquantum well structures were grown by solid source molecular beam epitaxy using either As2 or As4 over a substrate temperature range of 420-535 °C. All quantum wells had similar arsenic compositions with a 2.2% standard deviation regardless of arsenic species or growth temperature. This temperature insensitivity of arsenic incorporation in InAsP is in sharp contrast to InGaAsP in which arsenic composition is very sensitive to both substrate temperature and gallium percentage in the compound. The insensitivity of arsenic incorporation in InAsP to substrate temperature may result from growth in a phosphorus rich condition with indium as the only available cation.",

author = "G. Dagnall and Brown, {A. S.} and Stock, {S. R.}",

year = "1999",

month = oct,

doi = "10.1007/s11664-999-0246-0",

language = "English (US)",

volume = "28",

pages = "1108--1110",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "10",

}

TY - JOUR

T1 - Arsenic incorporation in InAsP/InP quantum wells

AU - Dagnall, G.

AU - Brown, A. S.

AU - Stock, S. R.

PY - 1999/10

Y1 - 1999/10

N2 - InAsP/InP multiquantum well structures were grown by solid source molecular beam epitaxy using either As2 or As4 over a substrate temperature range of 420-535 °C. All quantum wells had similar arsenic compositions with a 2.2% standard deviation regardless of arsenic species or growth temperature. This temperature insensitivity of arsenic incorporation in InAsP is in sharp contrast to InGaAsP in which arsenic composition is very sensitive to both substrate temperature and gallium percentage in the compound. The insensitivity of arsenic incorporation in InAsP to substrate temperature may result from growth in a phosphorus rich condition with indium as the only available cation.

AB - InAsP/InP multiquantum well structures were grown by solid source molecular beam epitaxy using either As2 or As4 over a substrate temperature range of 420-535 °C. All quantum wells had similar arsenic compositions with a 2.2% standard deviation regardless of arsenic species or growth temperature. This temperature insensitivity of arsenic incorporation in InAsP is in sharp contrast to InGaAsP in which arsenic composition is very sensitive to both substrate temperature and gallium percentage in the compound. The insensitivity of arsenic incorporation in InAsP to substrate temperature may result from growth in a phosphorus rich condition with indium as the only available cation.

UR - http://www.scopus.com/inward/record.url?scp=0033320277&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033320277&partnerID=8YFLogxK

U2 - 10.1007/s11664-999-0246-0

DO - 10.1007/s11664-999-0246-0

M3 - Article

AN - SCOPUS:0033320277

SN - 0361-5235

VL - 28

SP - 1108

EP - 1110

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Arsenic incorporation in InAsP/InP quantum wells

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this