Arsenic incorporation in InAsP/InP quantum wells

G. Dagnall*, A. S. Brown, S. R. Stock

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

InAsP/InP multiquantum well structures were grown by solid source molecular beam epitaxy using either As2 or As4 over a substrate temperature range of 420-535 °C. All quantum wells had similar arsenic compositions with a 2.2% standard deviation regardless of arsenic species or growth temperature. This temperature insensitivity of arsenic incorporation in InAsP is in sharp contrast to InGaAsP in which arsenic composition is very sensitive to both substrate temperature and gallium percentage in the compound. The insensitivity of arsenic incorporation in InAsP to substrate temperature may result from growth in a phosphorus rich condition with indium as the only available cation.

Original languageEnglish (US)
Pages (from-to)1108-1110
Number of pages3
JournalJournal of Electronic Materials
Volume28
Issue number10
DOIs
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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