Artificially atomic-scale ordered superlattice alloys for thermoelectric applications

S. Cho*, Y. Kim, A. DiVenere, G. K.L. Wong, A. J. Freeman, J. B. Ketterson, L. J. Olafsen, I. Vurgaftman, J. R. Meyer, C. A. Hoffman, G. Chen

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

We report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-zt materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.

Original languageEnglish (US)
Pages (from-to)Z241-Z245
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume4
StatePublished - Jan 1 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Cho, S., Kim, Y., DiVenere, A., Wong, G. K. L., Freeman, A. J., Ketterson, J. B., Olafsen, L. J., Vurgaftman, I., Meyer, J. R., Hoffman, C. A., & Chen, G. (2001). Artificially atomic-scale ordered superlattice alloys for thermoelectric applications. Proceedings - IEEE International Symposium on Circuits and Systems, 4, Z241-Z245.