Atom probe analysis of roughness and chemical intermixing in CoFe/Cu films (invited)

D. J. Larson*, A. Cerezo, P. H. Clifton, A. K. Petford-Long, R. L. Martens, T. F. Kelly, N. Tabat

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

28 Scopus citations

Abstract

Three-dimensional atom probe analyses of the interfaces between CoFe and Cu layers has shown that both roughness and chemical intermixing can occur independently. Interfaces formed by the deposition of Cu onto CoFe mimic the roughness present in previously deposited interfaces, but have a very small amount of interfacial mixing. In contrast, interfaces formed by the deposition of CoFe onto Cu are less rough, but more chemically intermixed. The region of chemical intermixing formed when CoFe is deposited onto Cu (0.7-1.0 nm) is approximately two times larger than that when Cu is deposited onto CoFe (0.3-0.5 nm).

Original languageEnglish (US)
Pages (from-to)7517-7521
Number of pages5
JournalJournal of Applied Physics
Volume89
Issue number11 II
DOIs
StatePublished - Jun 1 2001
Event8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States
Duration: Jan 7 2001Jan 11 2001

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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