Atom probe analysis of roughness and chemical intermixing in CoFe/Cu films (invited)

D. J. Larson; A. Cerezo; P. H. Clifton; A. K. Petford-Long; R. L. Martens; T. F. Kelly; N. Tabat

doi:10.1063/1.1354593

Atom probe analysis of roughness and chemical intermixing in CoFe/Cu films (invited)

D. J. Larson^*, A. Cerezo, P. H. Clifton, A. K. Petford-Long, R. L. Martens, T. F. Kelly, N. Tabat

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

Three-dimensional atom probe analyses of the interfaces between CoFe and Cu layers has shown that both roughness and chemical intermixing can occur independently. Interfaces formed by the deposition of Cu onto CoFe mimic the roughness present in previously deposited interfaces, but have a very small amount of interfacial mixing. In contrast, interfaces formed by the deposition of CoFe onto Cu are less rough, but more chemically intermixed. The region of chemical intermixing formed when CoFe is deposited onto Cu (0.7-1.0 nm) is approximately two times larger than that when Cu is deposited onto CoFe (0.3-0.5 nm).

Original language	English (US)
Pages (from-to)	7517-7521
Number of pages	5
Journal	Journal of Applied Physics
Volume	89
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1354593
State	Published - Jun 1 2001
Event	8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States Duration: Jan 7 2001 → Jan 11 2001

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1354593

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@article{9eb9ce7f8252483ea25c067e011f2207,

title = "Atom probe analysis of roughness and chemical intermixing in CoFe/Cu films (invited)",

abstract = "Three-dimensional atom probe analyses of the interfaces between CoFe and Cu layers has shown that both roughness and chemical intermixing can occur independently. Interfaces formed by the deposition of Cu onto CoFe mimic the roughness present in previously deposited interfaces, but have a very small amount of interfacial mixing. In contrast, interfaces formed by the deposition of CoFe onto Cu are less rough, but more chemically intermixed. The region of chemical intermixing formed when CoFe is deposited onto Cu (0.7-1.0 nm) is approximately two times larger than that when Cu is deposited onto CoFe (0.3-0.5 nm).",

author = "Larson, {D. J.} and A. Cerezo and Clifton, {P. H.} and Petford-Long, {A. K.} and Martens, {R. L.} and Kelly, {T. F.} and N. Tabat",

note = "Copyright: Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.; 8th Joint Magnetism and Magnetic Materials-Intermag Conference ; Conference date: 07-01-2001 Through 11-01-2001",

year = "2001",

month = jun,

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doi = "10.1063/1.1354593",

language = "English (US)",

volume = "89",

pages = "7517--7521",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Atom probe analysis of roughness and chemical intermixing in CoFe/Cu films (invited)

AU - Larson, D. J.

AU - Cerezo, A.

AU - Clifton, P. H.

AU - Petford-Long, A. K.

AU - Martens, R. L.

AU - Kelly, T. F.

AU - Tabat, N.

PY - 2001/6/1

Y1 - 2001/6/1

N2 - Three-dimensional atom probe analyses of the interfaces between CoFe and Cu layers has shown that both roughness and chemical intermixing can occur independently. Interfaces formed by the deposition of Cu onto CoFe mimic the roughness present in previously deposited interfaces, but have a very small amount of interfacial mixing. In contrast, interfaces formed by the deposition of CoFe onto Cu are less rough, but more chemically intermixed. The region of chemical intermixing formed when CoFe is deposited onto Cu (0.7-1.0 nm) is approximately two times larger than that when Cu is deposited onto CoFe (0.3-0.5 nm).

AB - Three-dimensional atom probe analyses of the interfaces between CoFe and Cu layers has shown that both roughness and chemical intermixing can occur independently. Interfaces formed by the deposition of Cu onto CoFe mimic the roughness present in previously deposited interfaces, but have a very small amount of interfacial mixing. In contrast, interfaces formed by the deposition of CoFe onto Cu are less rough, but more chemically intermixed. The region of chemical intermixing formed when CoFe is deposited onto Cu (0.7-1.0 nm) is approximately two times larger than that when Cu is deposited onto CoFe (0.3-0.5 nm).

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U2 - 10.1063/1.1354593

DO - 10.1063/1.1354593

M3 - Conference article

AN - SCOPUS:0035356656

SN - 0021-8979

VL - 89

SP - 7517

EP - 7521

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 II

T2 - 8th Joint Magnetism and Magnetic Materials-Intermag Conference

Y2 - 7 January 2001 through 11 January 2001

ER -

Atom probe analysis of roughness and chemical intermixing in CoFe/Cu films (invited)

Abstract

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