Atom-probe tomographic study of interfaces of Cu2ZnSnS4photovoltaic cells

S. Tajima, R. Asahi, Dieter Isheim, David N Seidman, T. Itoh, M. Hasegawa, K. Ohishi

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44 Scopus citations

Abstract

The heterophase interfaces between the CdS buffer layer and the Cu2ZnSnS4(CZTS) absorption layers are one of the main factors affecting photovoltaic performance of CZTS cells. We have studied the compositional distributions at heterophase interfaces in CZTS cells using three-dimensional atom-probe tomography. The results demonstrate: (a) diffusion of Cd into the CZTS layer; (b) segregation of Zn at the CdS/CZTS interface; and (c) a change of oxygen and hydrogen concentrations in the CdS layer depending on the heat treatment. Annealing at 573K after deposition of CdS improves the photovoltaic properties of CZTS cells probably because of the formation of a heterophase epitaxial junction at the CdS/CZTS interface. Conversely, segregation of Zn at the CdS/CZTS interface after annealing at a higher temperature deteriorates the photovoltaic properties.

Original languageEnglish (US)
Article number093901
JournalApplied Physics Letters
Volume105
Issue number9
DOIs
StatePublished - Sep 1 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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