Atom-probe tomographic study of interfaces of Cu2ZnSnS4photovoltaic cells

S. Tajima; R. Asahi; D. Isheim; D. N. Seidman; T. Itoh; M. Hasegawa; K. Ohishi

doi:10.1063/1.4894858

Atom-probe tomographic study of interfaces of Cu₂ZnSnS₄photovoltaic cells

S. Tajima, R. Asahi, D. Isheim, D. N. Seidman, T. Itoh, M. Hasegawa, K. Ohishi

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

The heterophase interfaces between the CdS buffer layer and the Cu₂ZnSnS₄(CZTS) absorption layers are one of the main factors affecting photovoltaic performance of CZTS cells. We have studied the compositional distributions at heterophase interfaces in CZTS cells using three-dimensional atom-probe tomography. The results demonstrate: (a) diffusion of Cd into the CZTS layer; (b) segregation of Zn at the CdS/CZTS interface; and (c) a change of oxygen and hydrogen concentrations in the CdS layer depending on the heat treatment. Annealing at 573K after deposition of CdS improves the photovoltaic properties of CZTS cells probably because of the formation of a heterophase epitaxial junction at the CdS/CZTS interface. Conversely, segregation of Zn at the CdS/CZTS interface after annealing at a higher temperature deteriorates the photovoltaic properties.

Original language	English (US)
Article number	093901
Journal	Applied Physics Letters
Volume	105
Issue number	9
DOIs	https://doi.org/10.1063/1.4894858
State	Published - Sep 1 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4894858

Cite this

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title = "Atom-probe tomographic study of interfaces of Cu2ZnSnS4photovoltaic cells",

abstract = "The heterophase interfaces between the CdS buffer layer and the Cu2ZnSnS4(CZTS) absorption layers are one of the main factors affecting photovoltaic performance of CZTS cells. We have studied the compositional distributions at heterophase interfaces in CZTS cells using three-dimensional atom-probe tomography. The results demonstrate: (a) diffusion of Cd into the CZTS layer; (b) segregation of Zn at the CdS/CZTS interface; and (c) a change of oxygen and hydrogen concentrations in the CdS layer depending on the heat treatment. Annealing at 573K after deposition of CdS improves the photovoltaic properties of CZTS cells probably because of the formation of a heterophase epitaxial junction at the CdS/CZTS interface. Conversely, segregation of Zn at the CdS/CZTS interface after annealing at a higher temperature deteriorates the photovoltaic properties.",

author = "S. Tajima and R. Asahi and D. Isheim and Seidman, {D. N.} and T. Itoh and M. Hasegawa and K. Ohishi",

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AU - Tajima, S.

AU - Asahi, R.

AU - Isheim, D.

AU - Seidman, D. N.

AU - Itoh, T.

AU - Hasegawa, M.

AU - Ohishi, K.

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N2 - The heterophase interfaces between the CdS buffer layer and the Cu2ZnSnS4(CZTS) absorption layers are one of the main factors affecting photovoltaic performance of CZTS cells. We have studied the compositional distributions at heterophase interfaces in CZTS cells using three-dimensional atom-probe tomography. The results demonstrate: (a) diffusion of Cd into the CZTS layer; (b) segregation of Zn at the CdS/CZTS interface; and (c) a change of oxygen and hydrogen concentrations in the CdS layer depending on the heat treatment. Annealing at 573K after deposition of CdS improves the photovoltaic properties of CZTS cells probably because of the formation of a heterophase epitaxial junction at the CdS/CZTS interface. Conversely, segregation of Zn at the CdS/CZTS interface after annealing at a higher temperature deteriorates the photovoltaic properties.

AB - The heterophase interfaces between the CdS buffer layer and the Cu2ZnSnS4(CZTS) absorption layers are one of the main factors affecting photovoltaic performance of CZTS cells. We have studied the compositional distributions at heterophase interfaces in CZTS cells using three-dimensional atom-probe tomography. The results demonstrate: (a) diffusion of Cd into the CZTS layer; (b) segregation of Zn at the CdS/CZTS interface; and (c) a change of oxygen and hydrogen concentrations in the CdS layer depending on the heat treatment. Annealing at 573K after deposition of CdS improves the photovoltaic properties of CZTS cells probably because of the formation of a heterophase epitaxial junction at the CdS/CZTS interface. Conversely, segregation of Zn at the CdS/CZTS interface after annealing at a higher temperature deteriorates the photovoltaic properties.

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