Atom probe tomography of nanowires

Nari Jeon, Lincoln J. Lauhon*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Atom probe tomography (APT) is a destructive material characterization technique that can analyze the composition of small volumes (~100×100×100 nm3) of a sample with subnanometer resolution and part per million sensitivity. APT is therefore well suited to investigate semiconductor nanostructures in order to relate growth conditions to nanoscale structure and nanostructure to physical properties. Furthermore, the geometry of semiconductor nanowires facilitates their analysis by APT. This chapter is intended for scientists and engineers who are interested in using APT to characterize semiconductor nanowires or for those who wish to assess research findings derived from APT more critically and with a greater understanding of the method. We first introduce the principles of APT to provide the basic background needed to understand the capabilities and limitations of the method, and then briefly review experimental considerations including sample preparation, operation conditions, and reconstruction guidelines. We then present examples of the atom probe analysis of semiconductor nanowires focused on important analytical challenges including dopants and impurities, alloy fluctuations and clusters, and heterointerfaces. Concurrently, we explain key challenges to sample preparation and analysis and suggest approaches to overcome or circumvent these challenges.

Original languageEnglish (US)
Title of host publicationSemiconductor Nanowires I Growth and Theory, 2015
EditorsAnna Fontcuberta I. Morral, Shadi A. Dayeh, Chennupati Jagadish
PublisherAcademic Press Inc
Pages249-278
Number of pages30
ISBN (Print)9780128030271
DOIs
StatePublished - Jan 1 2015

Publication series

NameSemiconductors and Semimetals
Volume93
ISSN (Print)0080-8784

Keywords

  • Alloys
  • Atom probe tomography
  • Dopants
  • Heterostructures
  • Impurities
  • Interfaces
  • Semiconductor nanowires

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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