Atom probe tomography of nanowires

Nari Jeon; Lincoln J. Lauhon

doi:10.1016/bs.semsem.2015.07.003

Atom probe tomography of nanowires

Nari Jeon, Lincoln J. Lauhon^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

Atom probe tomography (APT) is a destructive material characterization technique that can analyze the composition of small volumes (~100×100×100 nm³) of a sample with subnanometer resolution and part per million sensitivity. APT is therefore well suited to investigate semiconductor nanostructures in order to relate growth conditions to nanoscale structure and nanostructure to physical properties. Furthermore, the geometry of semiconductor nanowires facilitates their analysis by APT. This chapter is intended for scientists and engineers who are interested in using APT to characterize semiconductor nanowires or for those who wish to assess research findings derived from APT more critically and with a greater understanding of the method. We first introduce the principles of APT to provide the basic background needed to understand the capabilities and limitations of the method, and then briefly review experimental considerations including sample preparation, operation conditions, and reconstruction guidelines. We then present examples of the atom probe analysis of semiconductor nanowires focused on important analytical challenges including dopants and impurities, alloy fluctuations and clusters, and heterointerfaces. Concurrently, we explain key challenges to sample preparation and analysis and suggest approaches to overcome or circumvent these challenges.

Original language	English (US)
Title of host publication	Semiconductor Nanowires I Growth and Theory, 2015
Editors	Anna Fontcuberta I. Morral, Shadi A. Dayeh, Chennupati Jagadish
Publisher	Academic Press Inc
Pages	249-278
Number of pages	30
ISBN (Print)	9780128030271
DOIs	https://doi.org/10.1016/bs.semsem.2015.07.003
State	Published - 2015

Publication series

Name	Semiconductors and Semimetals
Volume	93
ISSN (Print)	0080-8784

Funding

This chapter draws on advances made by many students and postdocs in the author's (L.J.L.) research group, including Daniel Perea, Eric Hemesath, Justin Connell, Sonal Padalkar, James Riley, Sonal Padalkar, Zhiyuan Sun, and Nari Jeon. The work described herein was supported by the National Science Foundation under DMR-1306854, DMR-1006069, DMR-0449933; the Office of Naval Research under N00014-09-0182; and the US DOE Office of Basic Energy Sciences through the Energy Frontier Research Center on Solid State Lighting Science. Atom probe tomography was performed at the Northwestern University Center for Atom-Probe Tomography (NUCAPT). NUCAPT is a Shared Facility at the Materials Research Center of Northwestern University, supported by the National Science Foundation's MRSEC program (DMR-1121262).

Keywords

Alloys
Atom probe tomography
Dopants
Heterostructures
Impurities
Interfaces
Semiconductor nanowires

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/bs.semsem.2015.07.003

Cite this

@inproceedings{02c9f1c9ac144ebdafe96cfd01534bcb,

title = "Atom probe tomography of nanowires",

abstract = "Atom probe tomography (APT) is a destructive material characterization technique that can analyze the composition of small volumes (\textasciitilde{}100×100×100 nm3) of a sample with subnanometer resolution and part per million sensitivity. APT is therefore well suited to investigate semiconductor nanostructures in order to relate growth conditions to nanoscale structure and nanostructure to physical properties. Furthermore, the geometry of semiconductor nanowires facilitates their analysis by APT. This chapter is intended for scientists and engineers who are interested in using APT to characterize semiconductor nanowires or for those who wish to assess research findings derived from APT more critically and with a greater understanding of the method. We first introduce the principles of APT to provide the basic background needed to understand the capabilities and limitations of the method, and then briefly review experimental considerations including sample preparation, operation conditions, and reconstruction guidelines. We then present examples of the atom probe analysis of semiconductor nanowires focused on important analytical challenges including dopants and impurities, alloy fluctuations and clusters, and heterointerfaces. Concurrently, we explain key challenges to sample preparation and analysis and suggest approaches to overcome or circumvent these challenges.",

keywords = "Alloys, Atom probe tomography, Dopants, Heterostructures, Impurities, Interfaces, Semiconductor nanowires",

author = "Nari Jeon and Lauhon, \{Lincoln J.\}",

note = "Funding Information: This chapter draws on advances made by many students and postdocs in the author's (L.J.L.) research group, including Daniel Perea, Eric Hemesath, Justin Connell, Sonal Padalkar, James Riley, Sonal Padalkar, Zhiyuan Sun, and Nari Jeon. The work described herein was supported by the National Science Foundation under DMR-1306854, DMR-1006069, DMR-0449933; the Office of Naval Research under N00014-09-0182; and the US DOE Office of Basic Energy Sciences through the Energy Frontier Research Center on Solid State Lighting Science. Atom probe tomography was performed at the Northwestern University Center for Atom-Probe Tomography (NUCAPT). NUCAPT is a Shared Facility at the Materials Research Center of Northwestern University, supported by the National Science Foundation's MRSEC program (DMR-1121262).",

year = "2015",

doi = "10.1016/bs.semsem.2015.07.003",

language = "English (US)",

isbn = "9780128030271",

series = "Semiconductors and Semimetals",

publisher = "Academic Press Inc",

pages = "249--278",

editor = "Morral, \{Anna Fontcuberta I.\} and Dayeh, \{Shadi A.\} and Chennupati Jagadish",

booktitle = "Semiconductor Nanowires I Growth and Theory, 2015",

}

TY - GEN

T1 - Atom probe tomography of nanowires

AU - Jeon, Nari

AU - Lauhon, Lincoln J.

N1 - Funding Information: This chapter draws on advances made by many students and postdocs in the author's (L.J.L.) research group, including Daniel Perea, Eric Hemesath, Justin Connell, Sonal Padalkar, James Riley, Sonal Padalkar, Zhiyuan Sun, and Nari Jeon. The work described herein was supported by the National Science Foundation under DMR-1306854, DMR-1006069, DMR-0449933; the Office of Naval Research under N00014-09-0182; and the US DOE Office of Basic Energy Sciences through the Energy Frontier Research Center on Solid State Lighting Science. Atom probe tomography was performed at the Northwestern University Center for Atom-Probe Tomography (NUCAPT). NUCAPT is a Shared Facility at the Materials Research Center of Northwestern University, supported by the National Science Foundation's MRSEC program (DMR-1121262).

PY - 2015

Y1 - 2015

N2 - Atom probe tomography (APT) is a destructive material characterization technique that can analyze the composition of small volumes (~100×100×100 nm3) of a sample with subnanometer resolution and part per million sensitivity. APT is therefore well suited to investigate semiconductor nanostructures in order to relate growth conditions to nanoscale structure and nanostructure to physical properties. Furthermore, the geometry of semiconductor nanowires facilitates their analysis by APT. This chapter is intended for scientists and engineers who are interested in using APT to characterize semiconductor nanowires or for those who wish to assess research findings derived from APT more critically and with a greater understanding of the method. We first introduce the principles of APT to provide the basic background needed to understand the capabilities and limitations of the method, and then briefly review experimental considerations including sample preparation, operation conditions, and reconstruction guidelines. We then present examples of the atom probe analysis of semiconductor nanowires focused on important analytical challenges including dopants and impurities, alloy fluctuations and clusters, and heterointerfaces. Concurrently, we explain key challenges to sample preparation and analysis and suggest approaches to overcome or circumvent these challenges.

AB - Atom probe tomography (APT) is a destructive material characterization technique that can analyze the composition of small volumes (~100×100×100 nm3) of a sample with subnanometer resolution and part per million sensitivity. APT is therefore well suited to investigate semiconductor nanostructures in order to relate growth conditions to nanoscale structure and nanostructure to physical properties. Furthermore, the geometry of semiconductor nanowires facilitates their analysis by APT. This chapter is intended for scientists and engineers who are interested in using APT to characterize semiconductor nanowires or for those who wish to assess research findings derived from APT more critically and with a greater understanding of the method. We first introduce the principles of APT to provide the basic background needed to understand the capabilities and limitations of the method, and then briefly review experimental considerations including sample preparation, operation conditions, and reconstruction guidelines. We then present examples of the atom probe analysis of semiconductor nanowires focused on important analytical challenges including dopants and impurities, alloy fluctuations and clusters, and heterointerfaces. Concurrently, we explain key challenges to sample preparation and analysis and suggest approaches to overcome or circumvent these challenges.

KW - Alloys

KW - Atom probe tomography

KW - Dopants

KW - Heterostructures

KW - Impurities

KW - Interfaces

KW - Semiconductor nanowires

UR - https://www.scopus.com/pages/publications/84940861689

UR - https://www.scopus.com/inward/citedby.url?scp=84940861689&partnerID=8YFLogxK

U2 - 10.1016/bs.semsem.2015.07.003

DO - 10.1016/bs.semsem.2015.07.003

M3 - Conference contribution

AN - SCOPUS:84940861689

SN - 9780128030271

T3 - Semiconductors and Semimetals

SP - 249

EP - 278

BT - Semiconductor Nanowires I Growth and Theory, 2015

A2 - Morral, Anna Fontcuberta I.

A2 - Dayeh, Shadi A.

A2 - Jagadish, Chennupati

PB - Academic Press Inc

ER -

Atom probe tomography of nanowires

Abstract

Publication series

Funding

Keywords

ASJC Scopus subject areas

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