Atomic force microscopy of selenium sulfide passivated GaAs (100) surface

Beena Annie Kuruvilla; A. Datta; G. S. Shekhawat; A. K. Sharma; P. D. Vyas; R. P. Gupta; S. K. Kulkarni

doi:10.1063/1.118079

Atomic force microscopy of selenium sulfide passivated GaAs (100) surface

Beena Annie Kuruvilla^*, A. Datta, G. S. Shekhawat, A. K. Sharma, P. D. Vyas, R. P. Gupta, S. K. Kulkarni

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS₂ which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS₂.

Original language	English (US)
Pages (from-to)	415-417
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	3
DOIs	https://doi.org/10.1063/1.118079
State	Published - Jul 15 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Atomic force microscopy of selenium sulfide passivated GaAs (100) surface",

abstract = "Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2.",

author = "Kuruvilla, {Beena Annie} and A. Datta and Shekhawat, {G. S.} and Sharma, {A. K.} and Vyas, {P. D.} and Gupta, {R. P.} and Kulkarni, {S. K.}",

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AU - Kuruvilla, Beena Annie

AU - Datta, A.

AU - Shekhawat, G. S.

AU - Sharma, A. K.

AU - Vyas, P. D.

AU - Gupta, R. P.

AU - Kulkarni, S. K.

PY - 1996/7/15

Y1 - 1996/7/15

N2 - Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2.

AB - Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2.

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Atomic force microscopy of selenium sulfide passivated GaAs (100) surface

Abstract

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