Atomic force microscopy of selenium sulfide passivated GaAs (100) surface

Beena Annie Kuruvilla*, A. Datta, G. S. Shekhawat, A. K. Sharma, P. D. Vyas, R. P. Gupta, S. K. Kulkarni

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2.

Original languageEnglish (US)
Pages (from-to)415-417
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number3
DOIs
StatePublished - Jul 15 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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