Atomic force microscopy of selenium sulfide passivated GaAs (100) surface

Beena Annie Kuruvilla; A. Datta; G. S. Shekhawat; A. K. Sharma; P. D. Vyas; R. P. Gupta; S. K. Kulkarni

Atomic force microscopy of selenium sulfide passivated GaAs (100) surface

Beena Annie Kuruvilla^*, A. Datta, G. S. Shekhawat, A. K. Sharma, P. D. Vyas, R. P. Gupta, S. K. Kulkarni

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS₂ which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS₂.

Original language	English (US)
Number of pages	1
Journal	Applied Physics Letters
State	Published - Dec 1 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

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title = "Atomic force microscopy of selenium sulfide passivated GaAs (100) surface",

abstract = "Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2.",

author = "Kuruvilla, {Beena Annie} and A. Datta and Shekhawat, {G. S.} and Sharma, {A. K.} and Vyas, {P. D.} and Gupta, {R. P.} and Kulkarni, {S. K.}",

year = "1995",

month = dec,

day = "1",

language = "English (US)",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Atomic force microscopy of selenium sulfide passivated GaAs (100) surface

AU - Kuruvilla, Beena Annie

AU - Datta, A.

AU - Shekhawat, G. S.

AU - Sharma, A. K.

AU - Vyas, P. D.

AU - Gupta, R. P.

AU - Kulkarni, S. K.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2.

AB - Surface structure studies of GaAs(100) with and without chemical passivation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a successful passivating agent as seen from the increase in the photoluminescence (PL) intensity. Atomic force microscopy results indicate that it is possible to obtain ordered surface layers on GaAs using SeS2.

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SN - 0003-6951

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Atomic force microscopy of selenium sulfide passivated GaAs (100) surface

Abstract

ASJC Scopus subject areas

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