Atomic imaging of metal-semiconductor surfaces using UHV-HREM and diffraction

Laurence Marks; G. Jayaram; R. Plass; N. Doraiswamy

Atomic imaging of metal-semiconductor surfaces using UHV-HREM and diffraction

Laurence Marks^*, G. Jayaram, R. Plass, N. Doraiswamy

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Recent results about the atomic scale structure of pristine and metal covered, clean semiconductor surfaces using high resolution electron microscopy (HREM) and electron diffraction under ultrahigh vacuum (UHV) conditions are described.

Original language	English (US)
Pages (from-to)	181-190
Number of pages	10
Journal	Materials Research Society Symposium - Proceedings
Volume	355
State	Published - Jan 1 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "Atomic imaging of metal-semiconductor surfaces using UHV-HREM and diffraction",

abstract = "Recent results about the atomic scale structure of pristine and metal covered, clean semiconductor surfaces using high resolution electron microscopy (HREM) and electron diffraction under ultrahigh vacuum (UHV) conditions are described.",

author = "Laurence Marks and G. Jayaram and R. Plass and N. Doraiswamy",

year = "1995",

month = jan,

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language = "English (US)",

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journal = "Materials Research Society Symposium - Proceedings",

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T1 - Atomic imaging of metal-semiconductor surfaces using UHV-HREM and diffraction

AU - Marks, Laurence

AU - Jayaram, G.

AU - Plass, R.

AU - Doraiswamy, N.

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Y1 - 1995/1/1

N2 - Recent results about the atomic scale structure of pristine and metal covered, clean semiconductor surfaces using high resolution electron microscopy (HREM) and electron diffraction under ultrahigh vacuum (UHV) conditions are described.

AB - Recent results about the atomic scale structure of pristine and metal covered, clean semiconductor surfaces using high resolution electron microscopy (HREM) and electron diffraction under ultrahigh vacuum (UHV) conditions are described.

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Atomic imaging of metal-semiconductor surfaces using UHV-HREM and diffraction

Abstract

ASJC Scopus subject areas

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