Atomic imaging of metal-semiconductor surfaces using UHV-HREM and diffraction

Laurence Marks*, G. Jayaram, R. Plass, N. Doraiswamy

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Recent results about the atomic scale structure of pristine and metal covered, clean semiconductor surfaces using high resolution electron microscopy (HREM) and electron diffraction under ultrahigh vacuum (UHV) conditions are described.

Original languageEnglish (US)
Pages (from-to)181-190
Number of pages10
JournalMaterials Research Society Symposium - Proceedings
Volume355
StatePublished - Jan 1 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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