Atomic intermixing in short-period InAs/GaSb superlattices

Y. Ashuach*, Y. Kauffmann, D. Isheim, Y. Amouyal, D. N. Seidman, E. Zolotoyabko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and laser-assisted local-electrode atom-probe (LEAP) tomography are utilizing for characterizing short-period InAs/GaSb superlattices with an emphasis on obtaining the atomic concentration profiles with sub-nm resolution. HAADF-STEM permits direct visualization and counting of atomic columns in individual sub-layers. The spatial resolution of HAADF-STEM is sufficient to resolve the anion-cation dumbbells and, on this basis, to follow the atomic distributions across a superlattice. Both methods confirm that InAs-on-GaSb interfaces are wider than GaSb-on-InAs interfaces. The interfacial widths deduced from LEAP tomographic measurements are slightly larger than those extracted from HAADF-STEM micrographs, with the maximum total width not exceeding 4.5 monolayers. LEAP tomographic analysis shows the presence of about 7 at. % of Sb atoms in the middle of the InAs sub-layers, as a result of As/Sb substitutions during growth.

Original languageEnglish (US)
Article number241604
JournalApplied Physics Letters
Volume100
Issue number24
DOIs
StatePublished - Jun 11 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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