Atomic layer controlled deposition of Al                         2                         O                         3                          films using binary reaction sequence chemistry

A. W. Ott; K. C. McCarley; J. W. Klaus; J. D. Way; S. M. George

doi:10.1016/S0169-4332(96)00503-X

Atomic layer controlled deposition of Al ₂ O ₃ films using binary reaction sequence chemistry

A. W. Ott, K. C. McCarley, J. W. Klaus, J. D. Way, S. M. George^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

120 Scopus citations

Abstract

Al ₂ O ₃ films with precise thicknesses and high conformality were deposited using sequential surface chemical reactions. To achieve this controlled deposition, a binary reaction for Al ₂ O ₃ chemical vapor deposition (2A1(CH ₃ ) ₃ + 3H ₂ O → Al ₂ O ₃ + 6CH ₄ ) was separated into two half-reactions: (A) AlOH* + Al(CH ₃ ) ₃ → Al-O-Al(CH ₃ )* ₂ + CH ₄ , (B) AlCH* ₃ * + H ₂ O → AlOH* + CH ₄ , where the asterisks designate the surface species. Trimethylaluminum (Al(CH ₃ ) ₃ ) (TMA) and H ₂ O reactants were employed alternately in an ABAB . . . binary reaction sequence to deposit Al ₂ O ₃ films on single-crystal Si(100) and porous alumina membranes with pore diameters of ∼ 220 Å. Ellipsometric measurements obtained a growth rate of 1.1 Å/AB cycle on the Si(100) substrate at the optimal reaction conditions. The Al ₂ O ₃ films had an index of refraction of n = 1.65 that is consistent with a film density of ρ 3.50 g/cm ³ . Atomic force microscope images revealed that the Al ₂ O ₃ films were exceptionally flat with a surface roughness of only ± 3 Å (rms) after the deposition of ∼ 270 Å using 250 AB reaction cycles. Al ₂ O ₃ films were also deposited inside the pores of Anodisc alumina membranes. Gas flux measurements for H ₂ and N ₂ were consistent with a progressive pore reduction versus number of AB reaction cycles. Porosimetry measurements also showed that the original pore diameter of ∼ 220 Å was reduced to ∼ 130 Å after 120 AB reaction cycles.

Original language	English (US)
Pages (from-to)	128-136
Number of pages	9
Journal	Applied Surface Science
Volume	107
DOIs	https://doi.org/10.1016/S0169-4332(96)00503-X
State	Published - Nov 1996

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Ott, A. W., McCarley, K. C., Klaus, J. W., Way, J. D., & George, S. M. (1996). Atomic layer controlled deposition of Al ₂ O ₃ films using binary reaction sequence chemistry Applied Surface Science, 107, 128-136. https://doi.org/10.1016/S0169-4332(96)00503-X

@article{2a9958698129452aa3b2de569c40d222,

title = " Atomic layer controlled deposition of Al 2 O 3 films using binary reaction sequence chemistry ",

abstract = " Al 2 O 3 films with precise thicknesses and high conformality were deposited using sequential surface chemical reactions. To achieve this controlled deposition, a binary reaction for Al 2 O 3 chemical vapor deposition (2A1(CH 3 ) 3 + 3H 2 O → Al 2 O 3 + 6CH 4 ) was separated into two half-reactions: (A) AlOH* + Al(CH 3 ) 3 → Al-O-Al(CH 3 )* 2 + CH 4 , (B) AlCH* 3 * + H 2 O → AlOH* + CH 4 , where the asterisks designate the surface species. Trimethylaluminum (Al(CH 3 ) 3 ) (TMA) and H 2 O reactants were employed alternately in an ABAB . . . binary reaction sequence to deposit Al 2 O 3 films on single-crystal Si(100) and porous alumina membranes with pore diameters of ∼ 220 {\AA}. Ellipsometric measurements obtained a growth rate of 1.1 {\AA}/AB cycle on the Si(100) substrate at the optimal reaction conditions. The Al 2 O 3 films had an index of refraction of n = 1.65 that is consistent with a film density of ρ 3.50 g/cm 3 . Atomic force microscope images revealed that the Al 2 O 3 films were exceptionally flat with a surface roughness of only ± 3 {\AA} (rms) after the deposition of ∼ 270 {\AA} using 250 AB reaction cycles. Al 2 O 3 films were also deposited inside the pores of Anodisc alumina membranes. Gas flux measurements for H 2 and N 2 were consistent with a progressive pore reduction versus number of AB reaction cycles. Porosimetry measurements also showed that the original pore diameter of ∼ 220 {\AA} was reduced to ∼ 130 {\AA} after 120 AB reaction cycles. ",

author = "Ott, {A. W.} and McCarley, {K. C.} and Klaus, {J. W.} and Way, {J. D.} and George, {S. M.}",

year = "1996",

month = nov,

doi = "10.1016/S0169-4332(96)00503-X",

language = "English (US)",

volume = "107",

pages = "128--136",

journal = "Applied Surface Science",

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publisher = "Elsevier",

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Ott, AW, McCarley, KC, Klaus, JW, Way, JD & George, SM 1996, ' Atomic layer controlled deposition of Al ₂ O ₃ films using binary reaction sequence chemistry ', Applied Surface Science, vol. 107, pp. 128-136. https://doi.org/10.1016/S0169-4332(96)00503-X

Atomic layer controlled deposition of Al ₂ O ₃ films using binary reaction sequence chemistry . / Ott, A. W.; McCarley, K. C.; Klaus, J. W.; Way, J. D.; George, S. M.

In: Applied Surface Science, Vol. 107, 11.1996, p. 128-136.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Atomic layer controlled deposition of Al 2 O 3 films using binary reaction sequence chemistry

AU - Ott, A. W.

AU - McCarley, K. C.

AU - Klaus, J. W.

AU - Way, J. D.

AU - George, S. M.

PY - 1996/11

Y1 - 1996/11

N2 - Al 2 O 3 films with precise thicknesses and high conformality were deposited using sequential surface chemical reactions. To achieve this controlled deposition, a binary reaction for Al 2 O 3 chemical vapor deposition (2A1(CH 3 ) 3 + 3H 2 O → Al 2 O 3 + 6CH 4 ) was separated into two half-reactions: (A) AlOH* + Al(CH 3 ) 3 → Al-O-Al(CH 3 )* 2 + CH 4 , (B) AlCH* 3 * + H 2 O → AlOH* + CH 4 , where the asterisks designate the surface species. Trimethylaluminum (Al(CH 3 ) 3 ) (TMA) and H 2 O reactants were employed alternately in an ABAB . . . binary reaction sequence to deposit Al 2 O 3 films on single-crystal Si(100) and porous alumina membranes with pore diameters of ∼ 220 Å. Ellipsometric measurements obtained a growth rate of 1.1 Å/AB cycle on the Si(100) substrate at the optimal reaction conditions. The Al 2 O 3 films had an index of refraction of n = 1.65 that is consistent with a film density of ρ 3.50 g/cm 3 . Atomic force microscope images revealed that the Al 2 O 3 films were exceptionally flat with a surface roughness of only ± 3 Å (rms) after the deposition of ∼ 270 Å using 250 AB reaction cycles. Al 2 O 3 films were also deposited inside the pores of Anodisc alumina membranes. Gas flux measurements for H 2 and N 2 were consistent with a progressive pore reduction versus number of AB reaction cycles. Porosimetry measurements also showed that the original pore diameter of ∼ 220 Å was reduced to ∼ 130 Å after 120 AB reaction cycles.

AB - Al 2 O 3 films with precise thicknesses and high conformality were deposited using sequential surface chemical reactions. To achieve this controlled deposition, a binary reaction for Al 2 O 3 chemical vapor deposition (2A1(CH 3 ) 3 + 3H 2 O → Al 2 O 3 + 6CH 4 ) was separated into two half-reactions: (A) AlOH* + Al(CH 3 ) 3 → Al-O-Al(CH 3 )* 2 + CH 4 , (B) AlCH* 3 * + H 2 O → AlOH* + CH 4 , where the asterisks designate the surface species. Trimethylaluminum (Al(CH 3 ) 3 ) (TMA) and H 2 O reactants were employed alternately in an ABAB . . . binary reaction sequence to deposit Al 2 O 3 films on single-crystal Si(100) and porous alumina membranes with pore diameters of ∼ 220 Å. Ellipsometric measurements obtained a growth rate of 1.1 Å/AB cycle on the Si(100) substrate at the optimal reaction conditions. The Al 2 O 3 films had an index of refraction of n = 1.65 that is consistent with a film density of ρ 3.50 g/cm 3 . Atomic force microscope images revealed that the Al 2 O 3 films were exceptionally flat with a surface roughness of only ± 3 Å (rms) after the deposition of ∼ 270 Å using 250 AB reaction cycles. Al 2 O 3 films were also deposited inside the pores of Anodisc alumina membranes. Gas flux measurements for H 2 and N 2 were consistent with a progressive pore reduction versus number of AB reaction cycles. Porosimetry measurements also showed that the original pore diameter of ∼ 220 Å was reduced to ∼ 130 Å after 120 AB reaction cycles.

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Ott AW, McCarley KC, Klaus JW, Way JD, George SM. Atomic layer controlled deposition of Al ₂ O ₃ films using binary reaction sequence chemistry Applied Surface Science. 1996 Nov;107:128-136. https://doi.org/10.1016/S0169-4332(96)00503-X