Atomic layer controlled deposition of Al2O3 films employing trimethylaluminum (TMA) and H2O vapor

A. C. Dillon*, A. W. Ott, S. M. George, J. D. Way

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Sequential surface chemical reactions for the controlled deposition of Al2O3 were studied using transmission Fourier transform infrared spectroscopy (FTIR). Experiments were performed in situ in an ultrahigh vacuum UHV chamber using high surface area alumina membranes. Trimethylaluminum [Al(CH3)3] (TMA) and H2 O vapor were employed sequentially in an ABAB... binary fashion to achieve atomic layer controlled growth. An optimal Al2O3 growth procedure was established that employed TMA/H2O exposures at 0.3 Torr and 500 K. The experiments revealed that each reaction was self-terminating and atomic layer controlled growth was dictated by the surface chemistry. The controlled deposition of Al2O3 may be employed on silicon surfaces for the formation of high dielectric gate and passivation layers.

Original languageEnglish (US)
Title of host publicationMetal-Organic Chemical Vapor Deposition of Electronic Ceramics
EditorsSeshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)1558992340
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Atomic layer controlled deposition of Al<sub>2</sub>O<sub>3</sub> films employing trimethylaluminum (TMA) and H<sub>2</sub>O vapor'. Together they form a unique fingerprint.

Cite this