Atomic layer controlled growth of SiO2 films using binary reaction sequence chemistry

J. W. Klaus*, A. W. Ott, J. M. Johnson, S. M. George

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

92 Scopus citations

Abstract

SiO2 thin films were deposited with atomic layer control using binary reaction sequence chemistry. The SiO2 growth was accomplished by separating the binary reaction SiCl4+ 2H2O→SiO2 + 4HCl into two half-reactions. Successive application of the half-reactions in an ABAB... sequence produced SiO2 deposition at temperatures between 600 and 800 K and reactant pressures of 1-10 Torr. The SiO2 growth was monitored using ellipsometry versus substrate temperature and reactant exposure time. The maximum SiO2 deposition per AB cycle was 1.1 Å/AB cycle at 600 K. The surface topography measured using atomic force microscopy was extremely flat with a roughness nearly identical to the initial substrate.

Original languageEnglish (US)
Pages (from-to)1092-1094
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number9
DOIs
StatePublished - Mar 3 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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