Atomic layer controlled growth of SiO2 films using binary reaction sequence chemistry

J. W. Klaus*, A. W. Ott, J. M. Johnson, S. M. George

*Corresponding author for this work

Research output: Contribution to journalArticle

92 Scopus citations


SiO2 thin films were deposited with atomic layer control using binary reaction sequence chemistry. The SiO2 growth was accomplished by separating the binary reaction SiCl4+ 2H2O→SiO2 + 4HCl into two half-reactions. Successive application of the half-reactions in an ABAB... sequence produced SiO2 deposition at temperatures between 600 and 800 K and reactant pressures of 1-10 Torr. The SiO2 growth was monitored using ellipsometry versus substrate temperature and reactant exposure time. The maximum SiO2 deposition per AB cycle was 1.1 Å/AB cycle at 600 K. The surface topography measured using atomic force microscopy was extremely flat with a roughness nearly identical to the initial substrate.

Original languageEnglish (US)
Pages (from-to)1092-1094
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - Mar 3 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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