Atomic layer deposition of molybdenum disulfide films using MoF6 and H2S

Anil U. Mane; Steven Letourneau; David J. Mandia; Jian Liu; Joseph A. Libera; Yu Lei; Qing Peng; Elton Graugnard; Jeffrey W. Elam

doi:10.1116/1.5003423

Atomic layer deposition of molybdenum disulfide films using MoF₆ and H₂S

Anil U. Mane, Steven Letourneau, David J. Mandia, Jian Liu, Joseph A. Libera, Yu Lei, Qing Peng, Elton Graugnard, Jeffrey W. Elam

Chemistry

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Molybdenum sulfide films were grown by atomic layer deposition on silicon and fused silica substrates using molybdenum hexafluoride (MoF₆) and hydrogen sulfide at 200 °C. In situ quartz crystal microbalance (QCM) measurements confirmed linear growth at 0.46 Å/cycle and self-limiting chemistry for both precursors. Analysis of the QCM step shapes indicated that MoS₂ is the reaction product, and this finding is supported by x-ray photoelectron spectroscopy measurements showing that Mo is predominantly in the Mo(IV) state. However, Raman spectroscopy and x-ray diffraction measurements failed to identify crystalline MoS₂ in the as-deposited films, and this might result from unreacted MoF_x residues in the films. Annealing the films at 350 °C in a hydrogen rich environment yielded crystalline MoS₂ and reduced the F concentration in the films. Optical transmission measurements yielded a bandgap of 1.3 eV. Finally, the authors observed that the MoS₂ growth per cycle was accelerated when a fraction of the MoF₆ pulses were substituted with diethyl zinc.

Original language	English (US)
Article number	01A125
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	36
Issue number	1
DOIs	https://doi.org/10.1116/1.5003423
State	Published - Jan 1 2018

Funding

This work made use of the XPS facility of the NUANCE Center at Northwestern University, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205). S.L. acknowledges support from the U.S. Department of Energy, Office of Science, Office of Workforce Development for Teachers and Scientists, Office of Science Graduate Student Research (SCGSR) program. The SCGSR program is administered by the Oak Ridge Institute for Science and Education for the DOE under Contract No. DE-SC0014664. Electron microscopy was performed at the Electron Microscopy Center for Materials Research (EMCMR) at Argonne National Laboratory. Use of the Center for Nanoscale Materials, including resources in the Electron Microscopy Center, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.5003423

Cite this

@article{fd33208810a041c093fdd63b07a5d990,

title = "Atomic layer deposition of molybdenum disulfide films using MoF6 and H2S",

abstract = "Molybdenum sulfide films were grown by atomic layer deposition on silicon and fused silica substrates using molybdenum hexafluoride (MoF6) and hydrogen sulfide at 200 °C. In situ quartz crystal microbalance (QCM) measurements confirmed linear growth at 0.46 {\AA}/cycle and self-limiting chemistry for both precursors. Analysis of the QCM step shapes indicated that MoS2 is the reaction product, and this finding is supported by x-ray photoelectron spectroscopy measurements showing that Mo is predominantly in the Mo(IV) state. However, Raman spectroscopy and x-ray diffraction measurements failed to identify crystalline MoS2 in the as-deposited films, and this might result from unreacted MoFx residues in the films. Annealing the films at 350 °C in a hydrogen rich environment yielded crystalline MoS2 and reduced the F concentration in the films. Optical transmission measurements yielded a bandgap of 1.3 eV. Finally, the authors observed that the MoS2 growth per cycle was accelerated when a fraction of the MoF6 pulses were substituted with diethyl zinc.",

author = "Mane, {Anil U.} and Steven Letourneau and Mandia, {David J.} and Jian Liu and Libera, {Joseph A.} and Yu Lei and Qing Peng and Elton Graugnard and Elam, {Jeffrey W.}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2018",

month = jan,

day = "1",

doi = "10.1116/1.5003423",

language = "English (US)",

volume = "36",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Atomic layer deposition of molybdenum disulfide films using MoF6 and H2S

AU - Mane, Anil U.

AU - Letourneau, Steven

AU - Mandia, David J.

AU - Liu, Jian

AU - Libera, Joseph A.

AU - Lei, Yu

AU - Peng, Qing

AU - Graugnard, Elton

AU - Elam, Jeffrey W.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Molybdenum sulfide films were grown by atomic layer deposition on silicon and fused silica substrates using molybdenum hexafluoride (MoF6) and hydrogen sulfide at 200 °C. In situ quartz crystal microbalance (QCM) measurements confirmed linear growth at 0.46 Å/cycle and self-limiting chemistry for both precursors. Analysis of the QCM step shapes indicated that MoS2 is the reaction product, and this finding is supported by x-ray photoelectron spectroscopy measurements showing that Mo is predominantly in the Mo(IV) state. However, Raman spectroscopy and x-ray diffraction measurements failed to identify crystalline MoS2 in the as-deposited films, and this might result from unreacted MoFx residues in the films. Annealing the films at 350 °C in a hydrogen rich environment yielded crystalline MoS2 and reduced the F concentration in the films. Optical transmission measurements yielded a bandgap of 1.3 eV. Finally, the authors observed that the MoS2 growth per cycle was accelerated when a fraction of the MoF6 pulses were substituted with diethyl zinc.

AB - Molybdenum sulfide films were grown by atomic layer deposition on silicon and fused silica substrates using molybdenum hexafluoride (MoF6) and hydrogen sulfide at 200 °C. In situ quartz crystal microbalance (QCM) measurements confirmed linear growth at 0.46 Å/cycle and self-limiting chemistry for both precursors. Analysis of the QCM step shapes indicated that MoS2 is the reaction product, and this finding is supported by x-ray photoelectron spectroscopy measurements showing that Mo is predominantly in the Mo(IV) state. However, Raman spectroscopy and x-ray diffraction measurements failed to identify crystalline MoS2 in the as-deposited films, and this might result from unreacted MoFx residues in the films. Annealing the films at 350 °C in a hydrogen rich environment yielded crystalline MoS2 and reduced the F concentration in the films. Optical transmission measurements yielded a bandgap of 1.3 eV. Finally, the authors observed that the MoS2 growth per cycle was accelerated when a fraction of the MoF6 pulses were substituted with diethyl zinc.

UR - http://www.scopus.com/inward/record.url?scp=85040113529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040113529&partnerID=8YFLogxK

U2 - 10.1116/1.5003423

DO - 10.1116/1.5003423

M3 - Article

AN - SCOPUS:85040113529

SN - 0734-2101

VL - 36

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 1

M1 - 01A125

ER -